2015
DOI: 10.1016/j.apsusc.2015.03.022
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Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin

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Cited by 23 publications
(10 citation statements)
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“…ZnAl 2 O 4 with a spinel crystalline structure and wide bind gap of 3.8 eV has drawn much attention [8] since it can be used as catalyst, catalyst support, and in optical coating with reasonable properties including withstanding high temperature, high mechanical resistance, better diffusion and ductility, and low surface acidity [9,10]. ZnO with a hexagonal wurtzite structure has a wide band gap (3.37 eV), making it appropriate for application such as a luminescent material in LED [11], phosphor material in CRT screens [12], in solar cells because of the high optical transmittance [13], and so on. In addition, ZnO has an excellent photocatalytic capacity to decompose organic pollutants to CO 2 and H 2 O.…”
Section: Introductionmentioning
confidence: 99%
“…ZnAl 2 O 4 with a spinel crystalline structure and wide bind gap of 3.8 eV has drawn much attention [8] since it can be used as catalyst, catalyst support, and in optical coating with reasonable properties including withstanding high temperature, high mechanical resistance, better diffusion and ductility, and low surface acidity [9,10]. ZnO with a hexagonal wurtzite structure has a wide band gap (3.37 eV), making it appropriate for application such as a luminescent material in LED [11], phosphor material in CRT screens [12], in solar cells because of the high optical transmittance [13], and so on. In addition, ZnO has an excellent photocatalytic capacity to decompose organic pollutants to CO 2 and H 2 O.…”
Section: Introductionmentioning
confidence: 99%
“…This hypothesis is in agreement with the scattered light measured from a thin layer of TiO 2 NPs on silicon at these wavelengths (see supplementary material). For embossed LEDs, the obtained values for the OPE are significantly higher than those reported with other approaches involving add-on layers made at room temperature 18 and comparable to or higher than the values obtained with approaches which require recrystallization 2,15 or even GaN patterning. 6,8,[24][25][26] Further enhancement is also expected after encapsulation, compared to the OPE value reported in Ref.…”
mentioning
confidence: 41%
“…Patterning the surface of the gallium nitride (GaN) layers on light emitting devices like matrices of micro-LEDs hybridized on CMOS substrates 11,12 or on thinner InGaN/ GaN LEDs is, however, more difficult to implement on a wafer-scale (unless, in the latter case, advanced lattice matched substrates are used). 13 More recently, add-on patterned layers have been introduced [14][15][16][17][18][19] and may help to circumvent this issue. The developed approaches use SiNbased or sol-gel-based photonic crystals, microprisms made from sputtered TiO 2 , arrays of microstructures made from polymers with or without high-index TiO 2 nanoparticles (NPs) in it, or grown ZnO wires.…”
mentioning
confidence: 99%
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“…The demand for the miniaturized oxygen partial pressure sensor is becoming increasingly high due to the low signal-to-noise ratio, low power consumption, reduced weight, and low cost, especially for integrated applications [1,33,34]. The patterning of ZnO NPs have been attempted by various techniques such as inkjet printing [35], imprinting [36], laser ablation [37], and photolithography [37,38]. However, the patterning of ZnO NPs is still challenged by the mechanical stability, chemical resistivity, and cost, etc.…”
Section: Sensing With the Patterned Zno Np Linesmentioning
confidence: 99%