Fabrication of high‐mobility <i>n</i> ‐type carbon nanotube thin‐film transistors on plastic film

Yasunishi, Tomohiro; Kishimoto, Shigeru; Kauppinen, Esko I.; Ohno, Yutaka

doi:10.1002/pssc.201300231

Cited by 9 publications

(6 citation statements)

References 34 publications

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“…When CNTs constitute the channels of fieldeffect transistors (FETs), short CNTs are dispersed or grown directly by controlling the atomic arrangement to produce a channel. [4][5][6] The short CNTs in CNT-dispersed channels have enormous numbers of connections between themselves, resulting in a low off-current in accordance with percolation theory. 7 It is hard to obtain a high on-current since the contact resistivity between CNTs is high and the number density of current paths is not high enough for the effective carrier modulation of CNTs.…”

supporting

confidence: 61%

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

Myodo

Inaba

Ohara

et al. 2015

Applied Physics Letters

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Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

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supporting

confidence: 61%

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

Myodo

Inaba

Ohara

et al. 2015

Applied Physics Letters

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“…Single‐wall carbon nanotubes (SWNTs) have proved particularly interesting for plastic electronics. Indeed they show a good electrical conductivity associated with high charge‐carrier mobility in thin‐film transistors (TFTs) . With regard to materials processing, SWNTs represent a lightweight, flexible material adapted to solution processing , and compatible with high‐throughput techniques: printing , spray , or roll‐to‐roll .…”

Section: Introductionmentioning

confidence: 99%

Gram‐scale carbon nanotubes as semiconducting material for highly versatile route of integration in plastic electronics

Hugot

Casademont

Jouni

et al. 2015

Physica Status Solidi (a)

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International audienceA versatile chemical functionalization of single-walled carbon nanotubes (SWNT) is developed to eliminate the conductivity of metallic SWNTs in pristine SWNT mixtures, without sorting. Thanks to the high selectivity of the diazoether reagent, metallic SWNTs can be functionalized while preserving the transport properties of semiconducting SWNTs, even in nonindividually dispersed SWNT solutions. In this way, liters of aqueous semiconducting ink for printing or spray can be prepared at the laboratory scale and used for the fabrication of thin-film transistors (TFT) by spraying. Diazoether grafting also improved SWNT dispersion by preventing rebundling. Consequently, while less conductive than pristine SWNTs, diazoether-treated SWNTs provided higher TFT transconductance thanks to a more homogeneous percolation in the film. SWNT TFTs made on wafer and plastic with pristine and diazoether-treated SWNTs were compared. Sprayed films of diazoether treated, unsorted SWNTs provided TFTs with I ON /I OFF around 500, about 2 orders of magnitude higher than pristine SWNT TFTs. Mobilities were similar, up to 1 cm 2 /V s. Interestingly, diazoether-treated SWNT TFTs kept a high I ON /I OFF in a wide range of SWNT density and channel length, where pristine SWNT films became metallic

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“…In order to develop viable platforms for flexible electronics, signal processing and amplifier components must be fabricated on flexible substrates, thereby allowing for integration with sensors. In this regard, there have been reports on many different approaches for fabricating flexible digital and analog circuits using both inorganic and organic materials . In particular, flexible digital flip‐flop circuits and differential amplifiers have been reported, usually employing either p‐type or n‐type thin film transistors (TFTs) .…”

Section: Introductionmentioning

confidence: 99%

Bendable CMOS Digital and Analog Circuits Monolithically Integrated with a Temperature Sensor

Honda

Arie

Akita

et al. 2016

Adv Materials Technologies

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Flexible electronics is now one of key technologies for electronic devices that collect information from nonplanar surfaces, ultimately enabling the realization of the trillion sensor concept and the internet of things. Both flexible discrete devices and sensors are required for integration of digital and analog circuits for signal processing. In this study, flexible, energy efficient, complementary metal‐oxide‐semiconductor (CMOS) digital and analog circuits, monolithically integrated with a temperature sensor are reported: This is achieved by developing the process of p‐type and n‐type transistors on a flexible substrate. For the digital circuits, CMOS‐based J–K flip‐flop circuits are fabricated on a polyimide substrate, and testing confirms that they can be operated under mechanical bending without malfunction. Furthermore, the fabrication of a flexible analog differential amplifier is demonstrated, with the device successfully amplifying the output of an integrated temperature sensor by ≈38 times. Although these demonstrations are still at the proof‐of‐concept stage for flexible signal processing circuits, these achievements are a key step toward the next level of device integration, thereby enabling the development of viable flexible electronic devices.

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Fabrication of high‐mobility n ‐type carbon nanotube thin‐film transistors on plastic film

Cited by 9 publications

References 34 publications

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

Gram‐scale carbon nanotubes as semiconducting material for highly versatile route of integration in plastic electronics

Bendable CMOS Digital and Analog Circuits Monolithically Integrated with a Temperature Sensor

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