Fabrication of hybrid photodiode systems: BODIPY decorated cyclotriphosphazene covalently grafted graphene oxides

Özcan, Emrah; Aksoy, Burcu Topaloğlu; Eçik, Esra Tanrıverdi; Dere, A.; Karabulut, Abdulkerim; Yakuphanoğlu, F.; Çoşut, Bünyemin

doi:10.1039/d0qi00468e

Cited by 25 publications

(3 citation statements)

References 46 publications

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“…This photocurrent increased as the light intensity increased from 20 to 100 mW/cm 2 . This behavior is due to charge trapping at deep levels [33].…”

Section: Fig 6 the Ri-v Plots At Dark And Under Various Illumination ...mentioning

confidence: 99%

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Turan¹

2022

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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In this study, ZnO nanorods (ZnO-NR) were prepared on n-Si wafer by hydrothermal method. Structural and morphologic properties of ZnO nanostructures were investigated through XRD and SEM method. The illumination impacts on the current-voltage (I-V) measurements of the prepared Al/ZnO-NR/n-Si diode were explored in the dark and different illumination intensities (20–100 mW/cm2) between ± 1.5 V bias voltage range. The Schottky diode barrier height value had an increasing trend with increasing illumination intensity from 20 to 100 mW/cm2 while the ideality factor had a decreasing trend with the increase of photocurrent. The temporary photocurrent increases as illumination intensity increases. The slope (α) of the logI_ph-logP curve was obtained as 0.618 and this slope confirmed that this ZnO nanorod shows photoconducting behavior. The short-circuit current (I_sc) and open-circuit voltage (V_oc) values were obtained to be 774.08 μA and 0.24 V under 100 mW/cm2 illumination intensity, respectively. It was concluded that the prepared Al/ZnO-NR/n-Si diode can be used in the optoelectronic applications, especially for the photodiode industry.

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“…This photocurrent increased as the light intensity increased from 20 to 100 mW/cm 2 . This behavior is due to charge trapping at deep levels [33].…”

Section: Fig 6 the Ri-v Plots At Dark And Under Various Illumination ...mentioning

confidence: 99%

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Turan¹

2022

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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“…The movement of these pairs can give useful information about the contact structure. The electronhole pairs released along the contact can be separated by the electric field and move across the barrier [8], [40]- [42].…”

Section: (A) (B) (C)mentioning

confidence: 99%

Synthesis of TiO2 Nanotubes and Photodiode Performance

TAŞYÜREK

2023

Türk Doğa Ve Fen Dergisi

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In this study, titanium dioxide (TiO2) nanotubes were produced by anodization method using glycerol-based electrolyte. Structural characterization was investigated with SEM images and XRD pattern. The rectifying properties of n-type semiconductor TiO2 nanotubes were investigated. Current-voltage (I-V) measurements of the Pt/TiO2 nanotubes/Ti device were made at room temperature, in the dark and under different illumination conditions. The basic diode parameters were calculated by using thermionic emission (TE), Cheung and Norde functions from the I-V measurements of the devices in dark conditions. The ideality factors and barrier height of the Pt/TiO2 nanotubes/Ti device were calculated 1.25 and 0.91 eV, respectively by the TE method. According to the results obtained, the Pt/TiO2 nanotubes contact has a rectifying feature. In addition, the photovoltaic properties of the devices were examined by making I-V measurements at illumination intensities between 30 and 100 mW/cm2. As a result, it has been evaluated that the device can also be used as a photodiode.

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“…Semiconductor-based devices have revolutionized the landscape of modern electronics, driving advancements in computing, communication, and sensing technologies [1,2]. These devices rely on the controlled manipulation of electronic charge carriers within semiconductor materials to achieve a wide array of functionalities [3,4]. A critical aspect influencing the performance and efficiency of these devices lies in the design and engineering of interfacial layers between different semiconductor layers or between semiconductors and other materials [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Yıldız,

Karabulut,

Yıldırım

et al. 2024

Phys. Scr.

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This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on theelectrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p Si devices were produced by coating both materia- ls between the semiconductor and the metal using the RF sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by X-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current-voltage and transient photocurrent measurements were performed and analyzed under different light intensities. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current-voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. Additionally, the results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

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Fabrication of hybrid photodiode systems: BODIPY decorated cyclotriphosphazene covalently grafted graphene oxides

Abstract:
Combination of graphene sheets with various organic/inorganic functional groups could enhance the applications of graphene-based hybrid materials.

Cited by 25 publications

References 46 publications

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Synthesis of TiO2 Nanotubes and Photodiode Performance

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

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Fabrication of hybrid photodiode systems: BODIPY decorated cyclotriphosphazene covalently grafted graphene oxides

Abstract: Combination of graphene sheets with various organic/inorganic functional groups could enhance the applications of graphene-based hybrid materials.

Cited by 25 publications

References 46 publications

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Synthesis of TiO2 Nanotubes and Photodiode Performance

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Contact Info

Product

Resources

About

Abstract:
Combination of graphene sheets with various organic/inorganic functional groups could enhance the applications of graphene-based hybrid materials.