2008
DOI: 10.1116/1.2821734
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Fabrication of ideally ordered anodic porous alumina with large area by vacuum deposition of Al onto mold

Abstract: Articles you may be interested inSimulation and experiment of substrate aluminum grain orientation dependent self-ordering in anodic porous alumina Fabrication of two-dimensional polymer photonic crystals by nanoimprinting using anodic porous alumina mold J. Vac. Sci. Technol. B 28, 398 (2010); 10.1116/1.3368481 High-speed growth and photoluminescence of porous anodic alumina films with controllable interpore distances over a large range Appl. Phys. Lett. 91, 073109 (2007); 10.1063/1.2772184 Fabrication and st… Show more

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Cited by 10 publications
(7 citation statements)
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“…In addition, from the steady-state configuration in Fig. 2.4, the average barrier layer thickness along the two pore axes is 41.7 nm, which is in accordance with the stable barrier-layer thickness-to-voltage ratio of *1 nm V −1 found in experiments [92,172,173]. Figure 2.5 shows the results of another set of simulations which were different from Fig.…”
Section: Simulation Results and Discussionsupporting
confidence: 74%
“…In addition, from the steady-state configuration in Fig. 2.4, the average barrier layer thickness along the two pore axes is 41.7 nm, which is in accordance with the stable barrier-layer thickness-to-voltage ratio of *1 nm V −1 found in experiments [92,172,173]. Figure 2.5 shows the results of another set of simulations which were different from Fig.…”
Section: Simulation Results and Discussionsupporting
confidence: 74%
“…In addition, from Fig. 3.3d, the steady state average barrier layer thickness along the two pore axes is 41.2 nm, average pore diameter is 35.9 nm, and the pore growth rate is 0.94 nm s −1 , and these correspond very well to experimental observations [18,21].…”
Section: Electric Field-driven Pore Growth In Anodic Porous Aluminasupporting
confidence: 67%
“…The technique can be further applied for the growth of highly ordered AAO nanochannels over larger areas, as the size of the nanopatterned Si master can be readily scaled up using the existing Si lithographic technology. It is important to mention here that fabrication of patterned Al substrates to grow highly ordered AAO nanochannel arrays has been carried out recently by some other replication techniques based on physical methods such as vapor deposition and sputtering of Al onto molds [14,15].…”
Section: Resultsmentioning
confidence: 99%