Fabrication of In<sub>x</sub>Ga<sub>1−x</sub>N/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

Park, Ji‐Hyeon; Mandal, Ajay; Um, Dae‐Young; Kang, San; Lee, Da-Som; Lee, Cheul-Ro

doi:10.1039/c5ra06836c

Cited by 8 publications

(2 citation statements)

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“…). 9–11 Wurtzite GaN exhibits an anisotropic crystal structure and the properties of the material are closely related with the crystallographic orientations. For example, HEMT (High-electron-mobility transistor) is often built on the c -plane polar GaN, whereas the non-polar, including m - and a -plane GaN, has been used for nonlinear optics, high efficiency LED and laser.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic orientation control and optical properties of GaN nanowires

Wang

et al. 2018

RSC Adv.

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The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour-liquid-solid hydride vapour phase epitaxy (VLS-HVPE). The growth orientations of the GaN NWs are tuned from the polar c-axis to the non-polar m-axis by simply varying the supply of III precursors on various substrates, including c-, r, m-plane sapphire, (111) silicon and (0001) GaN. By varying the size of the Ni/Au catalyst, we found that the catalyst size has a negligible influence on the growth orientation of GaN NWs. All these demonstrate that the growth orientation of the GaN NWs is dominated by the flow rate of the precursor, regardless of the catalyst size and the substrate adopted. Moreover, the optical properties of GaN NWs were characterized using micro-photoluminescence, revealing that the observed red luminescence band (near 660 nm) is related to the lateral growth of the GaN NWs. The work presented here will advance the understanding of the VLS process of GaN NWs and represents a step forward towards controllable GaN NW growth.

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Section: Introductionmentioning

confidence: 99%

Crystallographic orientation control and optical properties of GaN nanowires

Wang

et al. 2018

RSC Adv.

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“…Immediately upon being noticed due to the device potential, this discovery ignited an explosion in investigation into the physics of quantum dots and a large number of groups became active embarking on a variety of research interests. The result was a long list of experimental [29][30][31][32][33][34][35][36][37][38] and theoretical [39][40][41][42][43][44][45][46][47][48] works dealing with elastic, thermal, electrical, magnetic, electronic, and optical phenomena, which motivated authors to envisage various solid-state devices. Early efforts had largely focused on the pairs of VSQD separated by thin barrierstermed quantum dot molecules (QDM) -because of their importance in realizing the short-distance quantum-state transfer, which is essential for the future quantum communication networks.…”

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confidence: 99%

The magneto-optics in quantum wires comprised of vertically stacked quantum dots: A calling for the magnetoplasmon qubits

Kushwaha¹

2019

EPL

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A deeper sense of advantages over the planar quantum dots and the foreseen applications in the single-electron devices and quantum computation have given vertically stacked quantum dots (VSQD) a width of interest. Here, we embark on the collective excitations in a quantum wire made-up of vertically stacked, self-assembled InAs/GaAs quantum dots in the presence of an applied magnetic field in the symmetric gauge. We compute and illustrate the influence of an applied magnetic field on the behavior characteristics of the density of states, Fermi energy, and collective (magnetoplasmon) excitations [obtained within the framework of random-phase approximation (RPA)]. The Fermi energy is observed to oscillate as a function of the Bloch vector. Remarkably, the intersubband single-particle continuum splits into two with a collective excitation propagating within the gap. This is attributed to the (orbital) quantum number owing to the applied magnetic field. Strikingly, the alteration in the well-and barrier-widths can enable us to customize the excitation spectrum in the desired energy range. These findings demonstrate, for the very first time, the viability and importance of studying the VSQD subjected to an applied magnetic field. The technological promise that emerges is the route to devices exploiting magnetoplasmon qubits as the potential option in designing quantum gates for the quantum communication networks. 78.20.Ls

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Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates

Park

Ahn

2023

Opt Quant Electron

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Optical properties of epitaxial quantum dots are of considerable interest for high e ciency optoelectronic devices and room-temperature quantum light sources. In this work, the general crystal orientation effects on the spontaneous emission peak of wurtzite (WZ) GaN/AlN quantum dots (QDs) grown on semi-polar substrates is studied theoretically. As crystal orientation changes from Θ=0° to Θ=90°, the spontaneous emission peak is predicted to increase almost ten-fold. This drastic change of the spontaneous emission peak is caused by the rapid increase of the optical dipole matrix elements with crystal orientation angle. The change of the optical matrix element is due to the change of the screening of built-in potential of the WZ QDs with the crystal orientation change. In particular, the spontaneous emission peak rapidly increases when the crystal angle exceeds Θ=50°.

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Fabrication of In_xGa_1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

Abstract: Merits of InAlGaN capping layer over self-assembled InxGa1−xN/GaN quantum dots coaxially grown on n-GaN nanowires using MOCVD.

Cited by 8 publications

References 46 publications

Crystallographic orientation control and optical properties of GaN nanowires

Crystallographic orientation control and optical properties of GaN nanowires

The magneto-optics in quantum wires comprised of vertically stacked quantum dots: A calling for the magnetoplasmon qubits

Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates

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Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

Abstract: Merits of InAlGaN capping layer over self-assembled InxGa1−xN/GaN quantum dots coaxially grown on n-GaN nanowires using MOCVD.

Cited by 8 publications

References 46 publications

Crystallographic orientation control and optical properties of GaN nanowires

Crystallographic orientation control and optical properties of GaN nanowires

The magneto-optics in quantum wires comprised of vertically stacked quantum dots: A calling for the magnetoplasmon qubits

Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates

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Fabrication of In_xGa_1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission