Fabrication of InP-based two-dimensional photonic crystal membrane

Abstract

Articles you may be interested inFabrication of high quality factor photonic crystal microcavities in In As P ∕ In P membranes combining reactive ion beam etching and reactive ion etchingSmooth sidewall in InP-based photonic crystal membrane etched by N 2 -based inductively coupled plasma Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching J.The fabrication process of a InP-based two-dimensional photonic crystal membrane structure is developed. The process includes a well-calibrated electron-beam ͑e-beam͒ lithography and InGaAsP/InP etching using methane-hydrogen-argon reactive ion etching. The photonic crystal blocks with ten rows of a hexagonal array of holes with various lattice constants and filling factors are successfully fabricated and characterized by optical transmission measurement. The sensitivity of the band gap to the systematic fabrication error is determined.

Perspectives on the application of InP-based photonic crystal waveguides for optical signal processing

“…Further fabrication details can be found in the references. 23 We next report results on pulse compression near the band-edge through the photonic crystal waveguide described above.…”

“…The PC patterns were defined by electron-beam lithography and etched into the InP/InGaAsP by Reactive Ion Etching (RIE) using Methane-Hydrogen-Argon (MHA). 23 The InP substrate was subsequently removed by selective wet etching to create a thin membrane with air cladding for vertical optical confinement. A cross-section of a PC membrane is shown in Fig.…”

Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge

“…Indeed, it is now possible with plasma etching process using high density plasma reactors such as Inductive Coupled Plasma (ICP) to transfer nanometer scale patterns from the mask to the substrate [1][2][3][4][5]. The success of the high aspect ratio pattern transfer without geometrical defects [6][7][8][9] (bowing, undercut, trenching,..) is tributary of a good understanding of the physical and chemical mechanisms of the plasma discharge and the surface kinetic processes.…”

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate

“…Therefore, it is very important to grow good quality and low TDD GaN-based epilayer. In the past decade, there have been a lot of studies focused on how to improve the crystalline quality of GaN-based epilayer, and attempted to grow ultra-flat surface, low TDD and high crystalline quality GaN-based epilayer on sapphire substrate, such as epitaxial lateral overgrowth (ELO) [5,6], cantilever epitaxy (CE) [7], microscale SiN x or SiO x patterned mask [8][9][10] and patterned sapphire substrate (PSS) [11][12][13][14][15][16][17].…”