Fabrication of large-area CCD detectors on high-purity, float-zone silicon

Gregory, J. A.; Burke, Barry E.; Cooper, Michael; Mountain, R. W.; Kosicki, B. B.

doi:10.1016/0168-9002(95)01406-3

Cited by 10 publications

(3 citation statements)

References 12 publications

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“…Bulk defects and dopant striation caused by the crystal pulling process were discussed as reasons for the concentric intensity variations of the images obtained. Crystal defects, such as stacking faults, arising from precipitation of oxygen, decorated with impurities can serve as recombination or generation centers [2][3][4]. Thus, the photo current of the pixels could be reduced when a high density of defects is present underneath the pixels.…”

mentioning

confidence: 99%

Bulk Wafer Defects Observable in Vision Chips

Rantzer

Svensson

2002

32nd European Solid-State Device Research Conference

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mentioning

confidence: 99%

Bulk Wafer Defects Observable in Vision Chips

Rantzer

Svensson

2002

32nd European Solid-State Device Research Conference

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“…Since float-zone silicon is vulnerable to the generation of plastic slip and dislocations and requires special processing techniques that limit thermally induced stresses during high-temperature processes Gregory et al (1996), migrating a science-grade CCD process technology to an even larger wafer size would require reassessment of all thermal processing as well as design/layout methods to minimize stresses induced by multiple layers of patterned polysilicon crossing channel stops.…”

Section: Ccd Vs Cmos Fabrication Process Comparisonmentioning

confidence: 99%

CMOS Detector Technology

2006

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An entry level overview of state-of-the-art CMOS detector technology is presented. Operating principles and system architecture are explained in comparison to the well-established CCD technology, followed by a discussion of important benefits of modern CMOS-based detector arrays. A number of unique CMOS features including different shutter modes and scanning concepts are described. In addition, sub-field stitching is presented as a technique for producing very large imagers. After a brief introduction to the concept of monolithic CMOS sensors, hybrid detectors technology is introduced. A comparison of noise reduction methods for CMOS hybrids is presented. The final sections review CMOS fabrication processes for monolithic and vertically integrated image sensors.

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“…Such high purity is needed in order to achieve the deep depletion depths essential for good spectroscopic performance at the higher Xray energies (6-10 keV), where the photon penetration depths become very long. Depending on clock levels, the depletion depths range from about 50 to 70 m. Unfortunately, floatzone silicon is vulnerable to the generation of plastic slip and dislocations and requires special processing techniques that limit thermally induced stresses during high-temperature processes [5]. Czochralski silicon, by virtue of its higher oxygen content, is not nearly so vulnerable, but such silicon is not available at the low dopant levels required of this application.…”

Section: A Architecture and Process Overviewmentioning

confidence: 99%

Soft-X-ray CCD imagers for AXAF

Burke

Gregory

Bautz

et al. 1997

IEEE Trans. Electron Devices

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We describe the key features and performance data of a 1024 2 1026-pixel frame-transfer imager for use as a soft-X-ray detector on the NASA X-ray observatory Advanced X-ray Astrophysics Facility (AXAF). The four-port device features a floating-diffusion output circuit with a responsivity of 20 V/e 0 and noise of about 2 e 0 at a 100-kHz data rate. Techniques for achieving the low sense-node capacitance of 5 fF are described. The CCD is fabricated on high-resistivity p-type silicon for deep depletion and includes narrow potential troughs for transfer inefficiencies of around 10 07. To achieve good sensitivity at energies below 1 keV, we have developed a back-illumination process that features low recombination losses at the back surface and has produced quantum efficiencies of about 0.7 at 277 eV (carbon K).

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Fabrication of large-area CCD detectors on high-purity, float-zone silicon

Cited by 10 publications

References 12 publications

Bulk Wafer Defects Observable in Vision Chips

Bulk Wafer Defects Observable in Vision Chips

CMOS Detector Technology

Soft-X-ray CCD imagers for AXAF

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