Chemical solution processing of Gd 2 Zr 2 O 7 (GZO) thin films via sol-gel and metalorganic decomposition (MOD) precursor routes have been studied on textured Ni-based tape substrates. Even though films processed by both techniques showed similar property characteristics, the MOD-derived samples developed a high degree of texture alignment at significantly lower temperatures. Both precursor chemistries resulted in exceptionally dense, pore-free, and smooth microstructures, reflected in the cross-sectional and plan-view high-resolution scanning and transmission electron microscopy studies. On the MOD GZO buffered Ni-3at.% W (Ni-W) substrates with additional CeO 2 /YSZ sputtered over layers, a 0.8-m-thick YBa 2 Cu 3 O 7−␦ (YBCO) film, grown by an ex situ metalorganic trifluoroacetate precursor method, yielded critical current, I c (77 K, self-field), of 100 A/cm width. Furthermore, using pulsed-laser deposited YBCO films, a zero-field superconducting critical current density, J c (77 K), of 1 × 10 6 A/cm 2 was demonstrated on an all-solution, simplified CeO 2 (MOD)/GZO(MOD)/Ni-W architecture. The present study establishes GZO buffers as a candidate material for low-cost, all-solution coated conductor fabrication.