Fabrication of low dark-count PureB single-photon avalanche diodes

Qi, Lin; Mok, K.R.C.; Aminian, Mahdi; Charbon, Edoardo; Nanver, L.K.

doi:10.1109/sbmicro.2014.6940113

Cited by 3 publications

(7 citation statements)

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“…The breakdown voltage of the active region (VBR,act) is simulated in 1D for PureB SPADs with Qe1 equal to 1×10 12 cm -2 , 3.5×10 12 cm -2 , 6×10 12 cm -2 and 8.5×10 12 cm -2 . Measured 18 and simulated breakdown voltages are compared in Figure 2 for different Qe1 and the results show excellent agreement confirming that the impact ionization starts in the active region. When the SPAD is operated at VEX higher than VBR,per-VBR,act an additional DCR source at the periphery starts to dominate the total DCR 15 .…”

Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 58%

“…Simulations of the PureB SPAD fabrication steps 18 are performed using Sentaurus Process 19 . The structure consists of an n + buried layer simulated with a constant phosphorus doping concentration of 10 18 cm -3 on top of which a 1-µm-thick epitaxial region (tepi) is deposited with a phosphorus doping concentration of Nepi = 10 15 cm -3 .…”

Section: Sources Of Dcr In Pureb Spads 21 Pureb Spad Process-simulatmentioning

confidence: 99%

“…These values lie in the theoretical range between 1.9×10 7 V/cm 21 and 3.1×10 7 V/cm 22 and are used as a fitting parameters to account for possible process variations. The simulations are compared to the measurements 18 as shown in Figure 4. There is a good agreement with the measurement although there is a difference in the slope at certain positions.…”

Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 99%

“…Figure 4. Comparison of the measured 18 and simulated DCR as a function of VEX for Qe1 = 1×10 12 cm -2 , 3.5×10 12 cm -2 , 6×10 12 cm -2 and 8.5×10 12 cm -2 .…”

Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 99%

“…2. Comparison of the measured VBR of PureB SPADs18 and simulated VBR of the 1D active region obtained from process simulations with Qe1 = 1×10 12 cm -2 , 3.5×10 12 cm -2 , 6×10 12 cm -2 and 8.5×10 12 cm -2 .Perimeter breakdown (VBR,per) at the PureB periphery is simulated by omitting the enhancement region implantation. It is found that VBR,per can be as low as 14 V since it depends on the structural and geometrical parameters such as oxide thickness, electrode overlap, lateral boron diffusion, and oxide interface charge concentration.…”

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confidence: 99%

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Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Knežević

Nanver

Suligoj

2019

Physics and Simulation of Optoelectronic Devices XXVII

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PureB single-photon avalanche diodes (SPADs) were investigated with the aid of a newly developed TCAD-based numerical modeling method with which characteristics related to the avalanching behavior can be simulated. The p + region forming the anode of the PureB p + n photodiode is extremely shallow, only a few nanometer deep, which is essential for obtaining a high photon detection efficiency (PDE) for near-, vacuum-and extreme-ultraviolet (NUV/VUV/EUV) light detection but when an implicit guard ring (GR) is implemented, the dark count rate (DCR) can, despite the GR, be deteriorated at the very sharp corners of the p +-region where there is a high concentration of the electric-field. By comparing measurements to simulations, the main mechanism dominating the DCR in the PureB SPADs was identified as band-toband tunneling (BTBT) while trap-assisted-tunneling also plays a role when the perimeter breakdown is low. Increasing the dose of carriers in the enhancement region negatively impacts the total DCR of the device, but also shifts the origin of the dominant DCR contribution from perimeter to the active region. The simulations for optimization of the SPAD geometry predict that a modification of the n-doped epitaxial region of the PureB SPADs could decrease the DCR by almost two orders of magnitude. This is achieved by increasing the n-epi-layer thickness from 1 µm to 3 µm and lowering the doping from 10 15 cm-3 to 10 14 cm-3. A high electric field at the vertical pn junction in the active region can also be minimized by modifying the implantation parameters of the n-enhancement region thus keeping the BTBT contribution to the DCR sufficiently low.

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Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 58%

Section: Sources Of Dcr In Pureb Spads 21 Pureb Spad Process-simulatmentioning

confidence: 99%

Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 99%

“…Figure 4. Comparison of the measured 18 and simulated DCR as a function of VEX for Qe1 = 1×10 12 cm -2 , 3.5×10 12 cm -2 , 6×10 12 cm -2 and 8.5×10 12 cm -2 .…”

Section: Analysis Of Dcr In Pureb Spadsmentioning

confidence: 99%

mentioning

confidence: 99%

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Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Knežević

Nanver

Suligoj

2019

Physics and Simulation of Optoelectronic Devices XXVII

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Diode design for studying material defect distributions with avalanche–mode light emission

Krakers

Knežević

Batenburg

et al. 2020

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)

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Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Krakers

Kneevic

Nanver

2019

2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

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The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from highquality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as singlephoton avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-darkcount-rate SPADs.

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Fabrication of low dark-count PureB single-photon avalanche diodes

Cited by 3 publications

References 7 publications

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Diode design for studying material defect distributions with avalanche–mode light emission

Reverse breakdown and light-emission patterns studied in Si PureB SPADs

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