Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

Fujiwara, Kosuke; Oogane, Mikihiko; Yokota, Saeko; Nishikawa, Takuo; Naganuma, Hiroshi; Ando, Yasuo

doi:10.1063/1.3677266

Cited by 68 publications

(51 citation statements)

References 14 publications

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“…As one of the most fundamental and critical performance parameters of MR sensors, sensitivity has exhibited a considerable growth in the last two decades [223,243,245,[248][249][250][251][252][253][254][255][256][257][258][259][260][261][262][263][264][265][266], as shown in Figure 6. The sensitivity [250,254] of MR sensors is defined in the linear operation range of the magnetic transfer curve as…”

Section: A Sensitivitymentioning

confidence: 99%

“…Both increased MR ratio and reduced saturation field give rise to an improved sensitivity. Large MR ratio can be obtained by selecting the thin-film materials [262,[267][268][269][270][271], optimizing the fabrication process [256,[272][273][274], and device geometry including layer thicknesses [257,[275][276][277]. Suppression of saturation field can be achieved by incorporating the sensors with magnetic flux concentrators (MFCs) [249,251,254,263], utilizing soft ferromagnetic materials with low saturation field [262], and modifying sensor geometry [257] as well.…”

Section: A Sensitivitymentioning

confidence: 99%

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Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

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Section: A Sensitivitymentioning

confidence: 99%

Section: A Sensitivitymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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“…Research on the development of such new devices is being performed by collaborations of industry, government, and academia. [87][88][89] …”

Section: Detection Of Biomagnetic Fieldsmentioning

confidence: 99%

Spintronics technology and device development

Ando

2015

Jpn. J. Appl. Phys.

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Spintronics is an emerging field of research that has made great advances in the last two decades. During this period, various new outstanding spintronics-related phenomena and devices using these phenomena have been proposed. In recent years, the period from the discovery of new spintronics-related materials and phenomena to the development and commercialization of devices using such materials and phenomena has markedly shortened. The importance of understanding the fundamental principles of spintronics has been increasing. In this review, I will first overview the features of spintronics technologies. Then, I will summarize the key technologies applied in the development of spintronic devices and describe their future prospects.

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“…A high sensitivity and a linear resistance response to external field are necessary for sensor applications. The sensitivity of sensor devices is defined as TMR ratio/2Hk, where Hk is the magnetic anisotropy field of the free layer [3]. We have to develop MTJs with high sensitivity of more than 100%/Oe in order to detect a small bio-magnetic field such as brain field (ca.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Magnetic Tunnel Junctions with Synthetic Coupled Free Layer for Highly Sensitive Magnetic Field Sensor Devices

Kato¹,

Oogane²,

Fujiwara³

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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Magnetic tunnel junctions (MTJs) with synthetic coupled CoFeSiB/ [Ta or Ru]/CoFeB free layers were fabricated. The spacer layer (Ta and Ru) thickness and annealing temperature dependences of magnetic property for free layers and TMR effect were systematically investigated. We have observed a linear resistance response against external field and have achieved a high sensitivity over 30%/Oe in MTJs with Ru spacer by optimization of Ru thickness and annealing temperature of MTJs.

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Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

Abstract: Articles you may be interested inMagnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer

Cited by 68 publications

References 14 publications

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Spintronics technology and device development

Fabrication of Magnetic Tunnel Junctions with Synthetic Coupled Free Layer for Highly Sensitive Magnetic Field Sensor Devices

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