Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique

Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

“…As a result, the interband transition energy and refractive index are modified, and interdiffusion has been used to fabricate lasers with different wavelengths without etching or epitaxial regrowth. 1 Selective interdiffusion has also been used to define optically transparent waveguides 2 and lasers with saturable absorbers. 3 There are currently two kinds of interdiffusion techniques, one is the impurity-induced interdiffusion ͑IID͒, [4][5][6] another is the impurity-free interdiffusion ͑IFID͒.…”

Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation

“…It has been demonstrated the spatial control of intermixing degree using the dielectric-cap technique by manipulating the amount of generated vacancies [8].…”

Effect of ion implantation on quantum well infrared photodetectors

“…As an alternative, quantum well intermixing techniques [7] are capable of tuning the absorption wavelength of quantum wells after growth. The techniques have been used successfully in fabricating optoelectronic devices [8][9][10][11][12] such as lasers and waveguides. Quantum well intermixing techniques include [7]: laser induced disordering, impurity free vacancy disordering, impurity induced disordering and ion implantation induced disordering, and each has been used to tune the detection wavelength of QWIPs [13][14][15][16][17][18][19].…”