Effect of ion implantation on quantum well infrared photodetectors

Hatefi-Kargan, Naser; Steenson, D.P.; Harrison, P.; Linfield, E. H.; Khanna, Suraj P.; Chakraborty, Subhasish; Dean, Paul; Upadhya, P. C.; Farrer, I.; Ritchie, D. A.; Sherliker, B.; Halsall, Matthew P.

doi:10.1016/j.infrared.2006.10.024

Cited by 4 publications

(2 citation statements)

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“…In most of the reported cases, where the segregation effect is neglected, an approximate solution based on the error function, given by the equation (2.5), is employed to model the QW intermixing at different diffusion lengths [20]. To evaluate the energy level and the emission energy for a strained In 0.3 Ga 0.7 As/GaAs QW and to study its dependence on the segregation and intermixing effects, the 1D stationary Schrödinger equation [21,22] has been numerically solved: −ħ 2 2…”

Section: Theoretical Considerationsmentioning

confidence: 99%

“…For the last decades, highly strained InGaAs/GaAs quantum wells (QWs) [1] have attracted considerable interest due to their fundamental physical properties and their potential capabilities for the fabrication of optoelectronic and photonic integrated circuits (PICs) [2,3] high-power semi-conductor diode lasers [4,5] and solar cells [6]. Due to its important role in adjusting the emission properties of quantum heterostructures, the interdiffusion process has been widely investigated theoretically and experimentally in various systems such as InGaAs/GaAs QW [7][8][9][10][11][12][13][14] However, the interface broadening and distortion of In-concentration profiles result from the well-known indium surface segregation in InGaAs/GaAs QW during the growth process.…”

Section: Introductionmentioning

confidence: 99%

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Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well

Souaf¹,

Baïra²,

Maaref³

et al. 2015

Condens. Matter Phys.

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In this work, we have theoretically investigated the intermixing effect in highly strained In 0.3 Ga 0.7 As/GaAs quantum well (QW) taking into consideration the composition profile change resulting from in-situ indium surface segregation. To study the impact of the segregation effects on the postgrowth intermixing, one dimensional steady state Schrodinger equation and Fick's second law of diffusion have been numerically solved by using the finite difference methods. The impact of the In/Ga interdiffusion on the QW emission energy is considered for different In segregation coefficients. Our results show that the intermixed QW emission energy is strongly dependent on the segregation effects. The interdiffusion enhanced energy shift is found to be considerably reduced for higher segregation coefficients. This work adds a considerable insight into the understanding and modelling of the effects of interdiffusion in semiconductor nanostructures.

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Section: Theoretical Considerationsmentioning

confidence: 99%