Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size     by Pulsed Gas Plasma

Ifuku, Toru; Otobe, Masanori; Itoh, Akira; Oda, Shunri

doi:10.1143/jjap.36.4031

Cited by 124 publications

(94 citation statements)

References 7 publications

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“…We used a very-high-frequency digital plasma process for nc-Si deposition that facilitates deposition of nc-Si dots of 8 ± 1 nm in diameter. 12,13 Density of the 8 nm nc-Si dots is typically about 10 11 -10 12 cm −2 in a monolayer, which are the same order with n s required for the large on-off ratio operation. We can control the amount of the nc-Si dots precisely by adjusting the deposition condition, therefore, we believe that this technique is suitable for fabricating the charged beam.…”

Section: Introductionmentioning

confidence: 96%

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Tsuchiya¹,

Takai²,

Momo³

et al. 2006

Journal of Applied Physics

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A nanoelectromechanical device incorporating the nanocrystalline silicon ͑nc-Si͒ dots is proposed for use as a high-speed and nonvolatile memory. The nc-Si dots are embedded as charge storage in a mechanically bistable floating gate. Position of the floating gate can therefore be switched between two stable states by applying gate bias. Superior on-off characteristics are demonstrated by using an equivalent circuit model which takes account of the variable capacitance due to the mechanical displacement of the floating gate. Mechanical property analysis conducted by using the finite element method shows that introduction of nc-Si dot array into the movable floating gate results in reduction of switching power. High switching frequency over 1 GHz is achieved by decreasing the length of the floating gate to the submicron regime. We also report on experimental observation of the mechanical bistability of the SiO 2 beam fabricated by using the conventional silicon etching processes.

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Section: Introductionmentioning

confidence: 96%

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Tsuchiya¹,

Takai²,

Momo³

et al. 2006

Journal of Applied Physics

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“…Size controlled Si nanocrystals (SiNCs) were deposited on p-Si substrates with a resistivity of 0.02 cm by very-high-frequency (VHF) SiH 4 plasma cell [4]. As shown in Fig.1, holes are injected into SiNCs through the p-Si substrate.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Size effects on hopping conduction in Si nanocrystals

Zhou

Uchida²,

Mizuta

et al. 2010

AIP Conference Proceedings

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“…That of the location depends mainly on the stability of the specimen stage, which is on the order of 0.1 nm over a few seconds, and that of the size depends only on the deposition time, which is accurately controlled by a computer. Some studies have been carried out to realize quantum devices and other types of devices by EBID [5,53,54]. EBID deposits can also be used as masks for ion milling to fabricate fine structures [55][56][57].…”

Section: Fabrication Of Tungsten Nanostructures By Ebid Using Stemmentioning

confidence: 99%

“…Another method is, of course, the 'top-down' approach. Typical examples of this approach are photolithographic patterning and etching processes, which are used for the production of microelectronic devices [5][6][7]. The resolution limit of these processes is approximately 100 nm because of the wavelength of visible light and the numerical aperture of the lens in addition to the resolution of resists.…”

Section: Introductionmentioning

confidence: 99%

Nanofabrication by advanced electron microscopy using intense and focused beam^∗

Furuya

2008

Science and Technology of Advanced Materials

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The nanogrowth and nanofabrication of solid substances using an intense and focused electron beam are reviewed in terms of the application of scanning and transmission electron microscopy (SEM, TEM and STEM) to control the size, position and structure of nanomaterials. The first example discussed is the growth of freestanding nanotrees on insulator substrates by TEM. The growth process of the nanotrees was observed in situ and analyzed by high-resolution TEM (HRTEM) and was mainly controlled by the intensity of the electron beam. The second example is position-and size-controlled nanofabrication by STEM using a focused electron beam. The diameters of the nanostructures grown ranged from 4 to 20 nm depending on the size of the electron beam. Magnetic nanostructures were also obtained using an iron-containing precursor gas, Fe(CO) 5 . The freestanding iron nanoantennas were examined by electron holography. The magnetic field was observed to leak from the nanostructure body which appeared to act as a 'nanomagnet'. The third example described is the effect of a vacuum on the size and growth process of fabricated nanodots containing W in an ultrahigh-vacuum field-emission TEM (UHV-FE-TEM). The size of the dots can be controlled by changing the dose of electrons and the partial pressure of the precursor. The smallest particle size obtained was about 1.5 nm in diameter, which is the smallest size reported using this method. Finally, the importance of a smaller probe and a higher electron-beam current with atomic resolution is emphasized and an attempt to develop an ultrahigh-vacuum spherical aberration corrected STEM (Cs-corrected STEM) at NIMS is reported.

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Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma

Cited by 124 publications

References 7 publications

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Size effects on hopping conduction in Si nanocrystals

Nanofabrication by advanced electron microscopy using intense and focused beam^∗

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Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma

Cited by 124 publications

References 7 publications

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

Size effects on hopping conduction in Si nanocrystals

Nanofabrication by advanced electron microscopy using intense and focused beam∗

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Product

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Nanofabrication by advanced electron microscopy using intense and focused beam^∗