We report an enhancement of terahertz radiation power from InAs surfaces excited by ultrashort laser pulses using an MgO hemispherical lens coupler. The power of the terahertz radiation from the InAs surface with the MgO lens coupler is 50 times larger than that from the InAs surface without the MgO lens coupler. The enhancement is explained mainly by the increase of the transmission efficiency of the THz wave from InAs to free space.

a b s t r a c tPhotoinduced electron transfer (PET) reactions promoted by 2-aryl substituted 1,3-dimethylbenzimidazolines (Ar-DMBIH) were investigated. Excited states of Ar-DMBIH, formed by irradiation using light above 360 nm, initiate PET reductions of various organic substrates, including transformations of epoxy ketones to aldols, free radical rearrangements such as the Dowd-Beckwith ringexpansion and 5-exo hexenyl cyclization, deprotection of N-sulfonyl-indols, and allylation of acyl formates. In these processes, Ar-DMBIH possessing 1-naphthyl, 2-naphthyl, 1-pyrenyl and 9-anthryl substituents formally act as two electron and one proton donors while the hydroxynaphthyl substituted derivative serves as a two electron and two proton donor. On the basis of the results of absorption spectroscopy studies, cyclic voltammetry and DFT calculation, a mechanistic sequence for these reduction reactions is proposed that involves initial photoexcitation of the aryl chromophore of the Ar-DMBIH followed by single electron transfer (SET) to the organic substrate to generate the radical cation of benzimidazoline and the radical anion of the substrate.

Transient photocurrents are measured to clarify carrier dynamics in a series of bulk heterojunction solar cells that are composed of [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) and diketopyrrolopyrrole‐tetrabenzoporphyrin conjugates substituted by straight alkyl groups (Cn‐DPP‐BP), of which the device parameters are largely dependent on the length of the substituted alkyl groups (Cn). The time profile of the observed transients indicates the presence of both unimolecular and bimolecular charge recombination processes in the active layer of the cells. Analysis of the photocurrent decays detected at various bias voltages using a drift model that considers charge extraction by electrodes and charge recombination in the active layer enables elucidation of the charge drift mobility, the initial photocarrier density, and the charge recombination rate constants. The bimolecular recombination rate constant is correlated with Cn and this is the main factor that determines the power conversion efficiency (η) of the Cn‐DPP‐BP:PCBM solar cells. The Cn‐dependent fill factor can be interpreted in terms of the bias voltage dependence of the ratio between the extraction and recombination charges (Qex/Qre). Comparison of η and Qex/Qre at the short‐circuit condition predicts that η for the Cn‐DPP‐BP:PCBM solar cell can be potentially improved up to 6%.

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We report the growth of germanium nanowires (Ge NWs) with single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300 degrees C, 280 degrees C, and 260 degrees C. The catalyst used in our experiment was Au nanoparticles with equivalent thicknesses of 0.1 nm (average diameter approximately 3 nm), 0.3 nm (average diameter approximately 4 nm), 1 nm (average diameter approximately 6 nm), and 3 nm (average diameter approximately 14 nm). The Gibbs-Thomson effect was used to explain our experimental results. The Ge NWs grown at 300 degrees C tend to have tapered structure while the Ge NWs grown at 280 degrees C and 260 degrees C tend to have straight structure. Tapering was caused by the uncatalysed deposition of Ge atoms via CVD mechanism on the sidewalls of nanowire and significantly minimised at lower temperature. We observed that the growth at lower temperature yielded Ge NWs with smaller diameter and also observed that the diameter and length of Ge NWs increases with the size of Au nanoparticles for all growth temperatures. For the same size of Au nanoparticles, Ge NWs tend to be longer with a decrease in temperature. The Ge NWs grown at 260 degrees C from 0.1-nm-thick Au had diameter as small as approximately 3 nm, offering an opportunity to fabricate high-performance p-type ballistic Ge NW transistor, to realise nanowire solar cell with higher efficiency, and also to observe the quantum confinement effect.