2003
DOI: 10.1109/tasc.2003.813678
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Fabrication of nanostructured superconducting single-photon detectors

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Cited by 85 publications
(51 citation statements)
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“…Contacts of 20 nm Nb and 60 nm Au were made using electron beam lithography and lift-off. Subsequently, we defined an etch mask of hydrogen silsesquioxane ͑HSQ͒ with electron beam lithography, and the material not covered with HSQ after exposure and development was etched away by reactive ion etching in a plasma of SF 6 and O 2 , followed by the removal of the etch mask with HF. Finally, the samples were glued and bonded on a chip carrier for testing.…”
mentioning
confidence: 99%
“…Contacts of 20 nm Nb and 60 nm Au were made using electron beam lithography and lift-off. Subsequently, we defined an etch mask of hydrogen silsesquioxane ͑HSQ͒ with electron beam lithography, and the material not covered with HSQ after exposure and development was etched away by reactive ion etching in a plasma of SF 6 and O 2 , followed by the removal of the etch mask with HF. Finally, the samples were glued and bonded on a chip carrier for testing.…”
mentioning
confidence: 99%
“…The chips were fabricated in Moscow using the technology described in Ref. 5. The SSPD meander was aligned to the fiber core with a precision of less than a 1 m and held in place by a beryllium copper spring.…”
mentioning
confidence: 99%
“…NbN films 3-4 nm thick were grown on sapphire (substrate temperature T S =900°C (Gol'tsman et al 2003;Gol'tsman et al 2007)) or MgO (T S =400°C (Marsili et al 2008)) www.intechopen.com substrates by reactive magnetron sputtering in an argon-nitrogen gas mixture. Using an optimized sputtering technique, our NbN samples exhibited a superconducting transition temperature of T C =10.5 K for 40-Å-thick films.…”
Section: Fabricationmentioning
confidence: 99%