Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment

Volland, Burkhard E.; Shi, Frank F.; Heerlein, H.; Rangelow, Ivo W.; Hudek, P.; Kostic̆, I.; Cekan, E.; Vonach, H.; Loeschner, Hans; Horner, C.; Stengl, G.; Buschbeck, H.; Zeininger, M.; Bleeker, Arno J.; Benschop, Jos

doi:10.1116/1.1319688

Cited by 4 publications

(2 citation statements)

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“…Typically, the fabrication process consists of three major steps: membrane etching, membrane implanting and framing, and stencil patterning 27. 28 The membrane is fabricated by anisotropic wet etching from the back side of a wafer (normally 500 μm thick), typically using KOH as the etchant and SiO 2 as the etching mask. A predefined p–n junction of 2 to 3 μm below the front surface is served as the etching stop.…”

Section: Projection Masks and Resistsmentioning

confidence: 99%

Recent Developments in Nanofabrication Using Ion Projection Lithography

Tseng

2005

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Ion projection lithography (IPL) is an emerging technology and a major candidate for the next-generation lithography (NGL) designed to complement and supplement current optical lithographic techniques for future chip manufacturing. In this Review, the recent developments of IPL technology are examined with an emphasis on its ability to fabricate a wide variety of nanostructures for the semiconductor industry. Following an introduction of the uniqueness and strength of the technology, the basics of ion-source development and ion-target interactions with and without chemical enhancement are presented. The developments in equipment systems, masks, and resists are subsequently studied. The resolution of printed nanostructures and the corresponding throughput of the current system are assessed for NGL. Finally, concluding remarks are presented to summarize the strengths and weaknesses of the current technology and to suggest the scope for future improvement.

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Section: Projection Masks and Resistsmentioning

confidence: 99%

Recent Developments in Nanofabrication Using Ion Projection Lithography

Tseng

2005

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“…In addition, this method is also useful for other projection-type lithographies of charged particles-like ion and electron beams. 2,3,7 …”

Section: Introductionmentioning

confidence: 99%

A method for evaluating aberration in the crossover image in mask irradiation optics of electron beam

Sohda

Ohta

Saitou

2002

Review of Scientific Instruments

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Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method Electron optical image correction subsystem in electron beam projection lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link Lie algebraic aberration theory and calculation method for combined electron beam focusing-deflection systems A method for evaluating aberration in the crossover image in a cell projection lithography system has been developed. In an electron-beam lithography system of projection-type such as a cell projection lithography system, the aberration in the crossover image causes the electron beam to pass off-axis in the electron optics. Optical simulation has quantitatively shown that the aberration in the crossover image causes an electron-beam blur and a positioning error on a writing sample. The evaluating method consists of four square apertures and a mark-detection function in a cell projection system. By measuring each position of the images of the four square apertures on the writing sample at difference focuses, the aberration can be calculated. The field curvature and the astigmatism in a cell projection system were evaluated by using this method. The field curvature agrees with the simulation. In addition, the measurement of the effect of beam alignment is also demonstrated. It is thus concluded that the method can effectively evaluate the aberration in the crossover image. This method is also useful for other projection-type lithographies of charged particles-like ion and electron beams.

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