Fabrication of pentanary Cu(InGa)(SeS)2 absorbers by selenization and sulfurization

Cu(In,Ga)Se₂ thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

“…Alberts et.al investigated the influence of elemental Se or H 2 Se, respectively, and found that Se-vapor-treated samples had nonuniform surface morphologies correlated with a relatively large variation in the Cu/In atomic ratio and Se concentration through the depth of the samples. 6 As shown in the SNMS depth profile [ Fig. 4(a)] our samples are more homogeneous.…”

“…3,4 Using sequential sputtering, the highest efficiencies of more than 16% could be demonstrated by Johanna Solar for a rather complex and costly pentanary system Cu(In,Ga)(Se,S) 2 from sputtered bilayer structures of CuGa and In, treated first in H 2 Se and subsequently in H 2 S. 5 A similar process was originally developed by Siemens and improved by Showa Shell and is called the sulfurization after selenization method. 6 Although these processes are very promising, a further reduction of process complexity and production costs is desirable. Up to now, most sputter-based fabrication methods work with more than one target and thus require the control of several cathodes which makes the process quite complex.…”

Improvement of the interface quality between Zn (O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700

“…(16 %) = V oc (0.685 V/cell) x J sc (31.8 mA/cm 2 ) x FF (0.735). To increase the R sh , the sulfurization step of the SAS process was carefully adjusted employing the "delta T sul-sel concept" as a process control parameter [4]. has been a major question in our CIS R&D for a long time.…”

Advanced characterization of electrodeposition-based high efficiency solar cells: Non-destructive Raman scattering quantitative assessment of the anion chemical composition in Cu(In,Ga)(S,Se)2 absorbers

“…A key feature in these processes is the controlled combination of sulfur and gallium to obtain the desired band-gap profile with high homogeneity of all elements over the full module area [5][6][7][8][9]. This work reports a detailed optoelectronic characterization of S-free (CIGSe:CuInGaSe 2 ) and S-containing (CIGSSe) electrodeposition-based solar cells, showing the impact of sulfur incorporation on devices characteristics.…”