2023
DOI: 10.1016/j.cej.2023.144279
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Fabrication of perovskite solar cells with PCE of 21.84% in open air by bottom-up defect passivation and stress releasement

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Cited by 17 publications
(4 citation statements)
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“…Figure e and Figure S1 show the AFM image, which indicates that the root-mean-square roughness ( R q ) of the treated SnO 2 film decreased from 3.23 to 1.66 nm, and the arithmetic mean roughness ( R a ) decreased from 2.57 to 1.32 nm, indicating that stable colloids were conducive to the preparation of a dense and uniformly covered ETL. In addition, the interface heterojunction, under the perovskite film, could significantly affect the deposition and subsequent crystal growth of the perovskite precursor solution, which plays a crucial role in obtaining high-performance PSCs Figure f shows the distribution of the perovskite grains in the upper layer of SnO 2 and S-PASP:SnO 2 films.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure e and Figure S1 show the AFM image, which indicates that the root-mean-square roughness ( R q ) of the treated SnO 2 film decreased from 3.23 to 1.66 nm, and the arithmetic mean roughness ( R a ) decreased from 2.57 to 1.32 nm, indicating that stable colloids were conducive to the preparation of a dense and uniformly covered ETL. In addition, the interface heterojunction, under the perovskite film, could significantly affect the deposition and subsequent crystal growth of the perovskite precursor solution, which plays a crucial role in obtaining high-performance PSCs Figure f shows the distribution of the perovskite grains in the upper layer of SnO 2 and S-PASP:SnO 2 films.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, the interface heterojunction, under the perovskite film, could significantly affect the deposition and subsequent crystal growth of the perovskite precursor solution, which plays a crucial role in obtaining high-performance PSCs. 26 Figure 1f shows the distribution of the perovskite grains in the upper layer of SnO 2 and S-PASP:SnO 2 films. A SnO 2 film with defects and pinholes indicates the presence of embedded perovskite nuclei, which limit the growth of larger perovskite crystals.…”
Section: Resultsmentioning
confidence: 99%
“…For instance, in regular PSC configuration, the widely reported, ntype metal oxides, such as SnO 2 , TiO 2 , and ZnO, are deposited between the bottom electrode and the perovskite absorber layer due to their highly electron-selective properties. 4,5 However, high processing temperatures (∼450 °C) are required to induce the crystallization of these metal oxides, which significantly increases the production cost of these devices. Moreover, while this requirement makes it impossible to manufacture solar cells on flexible substrates, it is also a nonnegligible obstacle for large-scale commercial device production methods in the roll-to-roll process.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The reason for surpassing the PCE of commercially available silicon-based devices in such a short time is the understanding of the perovskite material, which has high carrier mobilities and long exciton charge diffusion length associated with long carrier lifetimes, tunable band gap, and high absorption extinction coefficient. , The PSCs are mainly structured as regular (n–i–p) and inverted (p–i–n), according to the position of the charge transport layers. For instance, in regular PSC configuration, the widely reported, n-type metal oxides, such as SnO 2 , TiO 2 , and ZnO, are deposited between the bottom electrode and the perovskite absorber layer due to their highly electron-selective properties. , However, high processing temperatures (∼450 °C) are required to induce the crystallization of these metal oxides, which significantly increases the production cost of these devices. Moreover, while this requirement makes it impossible to manufacture solar cells on flexible substrates, it is also a non-negligible obstacle for large-scale commercial device production methods in the roll-to-roll process. , Even though inverted PSCs have lower device performance than regular PSCs, they are prepared with a lower processing temperature (∼100 °C) that allows them to be deposited onto flexible and large-scale substrates.…”
Section: Introductionmentioning
confidence: 99%