Fabrication of polycrystalline La0.7Sr0.3MnO3 thin films on Si (100) substrates by chemical solution deposition

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates

“…is the highest value reported for La 0.7 Sr 0.3 MnO 3 grown with or without a buffer layer on silicon substrates. [36][37][38]44,47,[51][52][53][54][55] Moreover, the electrical resistivity value at 300 K is 1.5 mΩ cm, which is quite similar to bulk La 0.7 Sr 0.3 MnO 3 , 56 and lower by a factor 2 compared to what we have obtained in the La 0.7 Sr 0.3 MnO 3 films of comparable thickness deposited on SrTiO 3 /Si by the same MBE technique. We also measured the electrical resistivity of a single CaTiO 3 layer on (100) Si substrate to rule out the effect of the oxygen content on the physical properties of CaTiO 3 .…”

Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method

“…Many techniques have been used to fabricate LSMO films, such as pulsed laser deposition [8][9][10], RF magnetron sputtering [11], metal-organic chemical vapor deposition (MOCVD) [12], wet chemical processes including the sol-gel method [13,14] and metallo-organic decomposition (MOD) method [15][16][17]. The wet chemical process generally offers significant advantages in the film fabrication of electronic materials, such as high purity, low cost, ease of composition control, relatively low-processing temperature and large deposition area [18].…”

“…In the wet chemical process, the preparation of high-quality films depends strongly on the synthesis of an appropriate precursor, the coating, the crystallization conditions and the substrate used. There are numerous reports on the preparation of LSMO films by the wet chemical process using different precursor solutions on various substrates such as Si, SiO 2 /Si, Al 2 O 3 , Pt/Si, SrTiO 3 and Y-stabilized zirconia [7,[13][14][15][16][17]. However, it is also important to understand the relationships of the growth conditions with the microstructures and electrical properties of the LSMO films fabricated by the wet chemical process.…”

Transport properties and microstructure of La0.7Sr0.3MnO3 nanocrystalline thin films grown by polymer-assisted chemical solution deposition

“…The film growth on Si (100) substrate resulted polycrystalline with pseudo-cubic orientation due to the large lattice mismatch degree between LSMO (100) films and Si (100) (a = 0.539 nm) substrates. Nevertheless, the small mismatch between LSMO (110) and Si (100) was reported to be 1.8 % in [10]. Therefore, LSMO grains grow via a self-textured growth mode and are randomly oriented.…”

“…Liu et al [10], also obtained that the LFMR of LSMO film on Si (100) substrate were as high as 2.54 % at H = 0.05 T and 300 K. Different from the intrinsic double-exchange-type CMR, induced by a strong magnetic field in the tesla range, the LFMR effect is attributed to spin dependent tunneling across the grain boundaries (GBs).…”