Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

Abstract

We prepared InGaN light-emitting diodes (LEDs) with the active layers grown from a mixed source of Ga-In-N materials on an n-type GaN substrate by a selective-area growth method and three fabrication steps: photolithography, epitaxial layer growth, and metallization. The preparation followed a previously developed experimental process using apparatus for mixed-source hydride vapor-phase epitaxy (HVPE), which consisted of a multi-graphite boat, for insulating against the high temperature and to control the growth rate of epilayers, filled with the mixed source on the inside and a radio-frequency (RF) heating coil for heating to a high temperature (T > 900°C) and for easy control of temperature outside the source zone. Two types of LEDs were prepared, with In compositions of 11.0 and 6.0% in the InGaN active layer, and room-temperature electroluminescence measurements exhibited a main peak corresponding to the In composition at either 420 or 390 nm. The consecutive growth of InGaN LEDs by the mixed-source HVPE method provides a technique for the production of LEDs with a wide range of In compositions in the active layer.

Chlorine-Assisted Growth of Epitaxial InGaN and AlGaN Crystals at Low Temperatures Using Plasma-Enhanced Chemical Vapor Deposition

“…The multiple core–shell structures of AlGaN/InGaN/GaN are helpful for the device performance of GaN-based LEDs and may be applied to the device fabrication of micro-LEDs on account of the similarities in their morphologies and sizes. For the InGaN and AlGaN crystals, the growth temperatures of the chlorine-assisted growth method in the PECVD reactor are much lower than those of the different growth methods, such as MOCVD, molecular beam epitaxy (MBE), and HVPE, reported in the literature, − which is shown in Table . Therefore, the related applications of low-temperature growth may be expanded drastically in the future.…”

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

“…Selective area epitaxy (SAE) [ 7 , 8 , 9 ] is one of the effective approaches to the implementation of these elements, using selective growth on patterned substrates with passivating masks, which exclude growth above them and ensure growth outside (i.e., in the so-called windows). There are a number of works demonstrating the use of SAE in the fabrication of different optical devices based on various material systems, including III-V (GaAs [ 8 , 10 , 11 ], InP [ 12 , 13 , 14 , 15 , 16 , 17 ]) and III-N semiconductor compounds (GaN [ 18 ], InGaN [ 19 ]). In particular, single-mode lasers with monolithically integrated modulators [ 20 , 21 ] and couplers [ 22 , 23 ] have been demonstrated.…”