Fabrication of Si-based nanoimprint stamps with sub-20 nm features

Maximov, Ivan; Sarwe, Eva-Lena; Beck, Marc; Deppert, Knut; Graczyk, Mariusz; Magnusson, Martin H.; Montelius, Lars

doi:10.1016/s0167-9317(02)00488-4

Cited by 51 publications

(25 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wafers were then spin coated (3000 rpm, 30 s) with PMMA-950 (diluted in anisol 8%) (Micro-chem corp, USA). The wafers were hard baked in oven (180 1C, 30 min), and then subjected to nanoimprinting using a silicon master stamp (made with the electron beam lithography (EBL) and lift off technique, [15,16]). The imprinting was carried out at 50 bar/180 1C (using a prototype imprinting machine: ''Nanoimprint 2,5 TOM'').…”

Section: Fabrication Of Substrata: Nanoimprinted Negative Patternmentioning

confidence: 99%

Axonal outgrowth on nano-imprinted patterns

et al. 2006

View full text Add to dashboard Cite

Section: Fabrication Of Substrata: Nanoimprinted Negative Patternmentioning

confidence: 99%

Axonal outgrowth on nano-imprinted patterns

et al. 2006

View full text Add to dashboard Cite

“…The first route includes conventional photolithography, electron beam lithography (EBL) [9] and focused ion beam lithography (FIBL) [10] followed by plasma etching [11][12][13]. Y. C. Chan [14] fabricated silicon pillars as small as 300 nm in feature size with an aspect-ratio higher than 50 by deep reactive ion etching (DRIE).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high aspect ratio (> 100:1) nanopillar array based on thiol-ene

Zhang

Deng

Shi

et al. 2016

Microelectronic Engineering

View full text Add to dashboard Cite

“…100 nm). Electron Beam Lithography (EBL) results to be one of the most used technique for obtaining nanostructures down to sub 10nm, using different strategies such e-resist development processed with cold developers (4−10 • C) or through a double layer resist system consisted in a 15 nm thick Chromium mask [1,2,3].…”

Section: Introductionmentioning

confidence: 99%

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Veroli

Mura

Balucani

et al. 2016

AIP Conference Proceedings

View full text Add to dashboard Cite

In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s)

show abstract

Fabrication of Si-based nanoimprint stamps with sub-20 nm features

Cited by 51 publications

References 6 publications

Axonal outgrowth on nano-imprinted patterns

Axonal outgrowth on nano-imprinted patterns

Fabrication of high aspect ratio (> 100:1) nanopillar array based on thiol-ene

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Contact Info

Product

Resources

About