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Nanoimprint lithography is a promising technique for fabrication of nanometer-sized structures with an eventual throughput capacity similar to UV-lithography based production of integrated circuits. In this article we address the possibility for wafer scale nanoimprint lithography, and the results presented here are all obtained from 2 in. sized substrate and stamp wafers. Our nanoimprint lithography equipment is described and some of its characteristics are discussed. These include ultrafast imprint cycle times of less than 2 min, good temperature monitoring, and control possibility of the substrate temperature. We show complete results after imprint, removal of remaining resist, and liftoff for 2 in. wafers. Furthermore, in this article the relation between polymer sticking to the stamp applied pressure, stamp depth, etc. is studied in detail.

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