A device used for superhigh-speed communications on the terahertz band is required. However, high-speed-response devices fabricated using Si-based technology cannot achieve this frequency. Field emitters have exhibited a high-speed response at frequencies higher than 100 GHz utilizing electron emission in a vacuum. Therefore, field emission devices are very suitable for use as high-speed switching elements. We have fabricated a local vacuum package enclosing a Si field emitter array and a Ti getter on a Si substrate using Si integrated circuit (IC) technology and micro-electro-mechanical system (MEMS) technology for an on-chip integrated device. In this paper, we discuss the Ti getter. The bridge structure getter was successfully evaporated within the cavity structure. This technique can realize micrometer-order alignment, and will be very useful for many applications owing to its high performance.