2005
DOI: 10.1116/1.1851533
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Fabrication of Si field emitter array in local vacuum package

Abstract: Negative transconductance region in the double-gated silicon field emitter arraysWe have fabricated a local vacuum package enclosing a Si field emitter array on Si substrate. To maintain the low pressure required for electron emission, a titanium evaporation getter was made as a bridge structure with the Si field emitter array in local vacuum package. The local vacuum package technique was adapted to the IC process for on-chip device fabrication. This technique will be very useful for many applications with hi… Show more

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Cited by 5 publications
(3 citation statements)
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“…Much research was devoted to this field [8,16,18,19,[20][21][22][23][24][25][26][27][28] by using getter technology, and the appropriate getters applicable for MEMS devices need high temperature activation. This paper proposed a novel package design with a vacuum buffer cavity as shown in Fig.…”
Section: Novel Package Design Conceptmentioning
confidence: 99%
“…Much research was devoted to this field [8,16,18,19,[20][21][22][23][24][25][26][27][28] by using getter technology, and the appropriate getters applicable for MEMS devices need high temperature activation. This paper proposed a novel package design with a vacuum buffer cavity as shown in Fig.…”
Section: Novel Package Design Conceptmentioning
confidence: 99%
“…For example, large field emitters with steerable beams have been developed for massively parallel direct-write lithography systems [2], vacuum micromachining, ultra-high speed switching elements [3] and nano-emissive and carbon nanotube displays. However, successful commercial applications have so far mostly been limited to niches, partly as a result of lifetime and reliability limitations of existing cold cathode [7].…”
Section: Previous Workmentioning
confidence: 99%
“…1. 4,5) To achieve this, we have fabricated a localized microvacuum package on a Si substrate that incorporates a FEA and a Ti getter. The local vacuum package technique was used to fabricate the Si emitter arrays with on-chip ICs.…”
Section: Introductionmentioning
confidence: 99%