2020
DOI: 10.1021/acsomega.0c04136
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Fabrication of Silicon Dioxide by Photo-Chemical Vapor Deposition to Decrease Detector Current of ZnO Ultraviolet Photodetectors

Abstract: Zinc oxide (ZnO)-based semiconductor is a promising application for ultraviolet photodetectors (UV PDs). The performance of ZnO UV PDs can be improved in two orientations: by reduction of the dark current and by increasing the photocurrent. In the study, we used two processes to prepare ZnO UV PDs: photochemical vapor deposition to fabricate silicon dioxide as an insulator layer and a radio frequency sputter system to prepare the ZnO film as an active layer. The results show that the silicon dioxide layer can … Show more

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Cited by 7 publications
(3 citation statements)
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“…However, UV radiation generated abundant availability of electrons and holes at the sensor surface, thus it extended the width of the depletion layer and further reduced electrical resistance of the sensor. 63 The UV radiation enhanced overall gas sensing performance by lowering activation energy between H 2 gas and sensor surface. Recent advancements of ZnO/rGO based sensors for H 2 sensing applications are illustrated in Table I.…”
Section: Zno/rgo Ncs In Gas Sensing Applicationsmentioning
confidence: 99%
“…However, UV radiation generated abundant availability of electrons and holes at the sensor surface, thus it extended the width of the depletion layer and further reduced electrical resistance of the sensor. 63 The UV radiation enhanced overall gas sensing performance by lowering activation energy between H 2 gas and sensor surface. Recent advancements of ZnO/rGO based sensors for H 2 sensing applications are illustrated in Table I.…”
Section: Zno/rgo Ncs In Gas Sensing Applicationsmentioning
confidence: 99%
“…In addition, the loose structure is not conducive to the transport of photogenerated carriers, which greatly limits the responsivity under illumination. On the other hand, defect-induced carriers widely exist in ZnO nanomaterials, and the resulting high dark current seriously impairs the performance of UV photodetectors, leading to unsatisfactory specific detectivity and on–off ratio. Thus, challenges remain for fabricating ZnO-based UV photodetectors with both excellent optoelectronic properties and mechanical flexibility.…”
Section: Introductionmentioning
confidence: 99%
“…However, ZnO films have high electrical resistance, which hinders their practical application. (4)(5)(6)(7)(8)(9) Accordingly, the problem of improving the electrical performance of ZnO thin films through doping with metallic elements such as Al, Ga, Ag, Ti, Zr, and Mo has attracted significant attention in recent years. (10)(11)(12)(13)(14)(15) In such methods, the doped atoms substitute for the Zn atoms in the ZnO crystal structure and produce free electrons in the conduction band, which lower the electrical resistivity.…”
Section: Introductionmentioning
confidence: 99%