Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources

Piao, Jinchun; Katori, Shigetaka; Kawaharamura, Toshiyuki; Li, Chaoyang; Fujita, Shizυo

doi:10.7567/jjap.51.090201

Cited by 11 publications

(4 citation statements)

References 29 publications

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“…16) Therefore, similarly in the mist CVD method, the amount of residual carbon in HfO 2 films can be controlled. Furthermore, the use of other oxygen precursors, such as H 2 O, O 2 , and ozone, [34][35][36] in the mist CVD method can also control the residual carbon content in HfO 2 films. Thus, the dependence of the growth temperature and oxygen precursors on carbon contamination in HfO 2 films and their ferroelectricity should be further investigated.…”

Section: Resultsmentioning

confidence: 99%

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates

Tahara

Nishinaka

Sato

et al. 2019

Jpn. J. Appl. Phys.

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This study effectively synthesized ferroelectric undoped ferroelectric-phase hafnium oxide (HfO 2 ) thin films on n + -Si(100) substrates without the need of any post-annealing for crystallization using mist chemical vapor deposition (CVD) techniques. Metal-ferroelectric highly doped n + -Si stacked capacitors exhibited ferroelectric polarization-electric field hysteresis at 1 kHz owing to the ferroelectric-phase HfO 2 with remnant polarization and coercive field values of approximately 7 μC cm −2 and 1.4 MV cm −1 , respectively. The resultant endurance cycle reached 1 × 10 9 after imposing fatigue pulses of 3 MV cm −1 , which is an excellent value reported so far. These ferroelectric properties were related to the surface morphology and density of the films, compared to the post-annealed ones. A clear microcrystalline structure in the as-deposited films suggested the formation of intermediate chemical compounds containing carbon. On the contrary, the ferroelectricity was lost by post-anneal enhancing crystallization, especially for paraelectric monoclinic phase. Finally, we expect that the mist CVD HfO 2 films will be promising in developing a key technology for Si-based ferroelectric LSIs.

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Section: Resultsmentioning

confidence: 99%

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates

Tahara

Nishinaka

Sato

et al. 2019

Jpn. J. Appl. Phys.

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“…Owing to these features, mist‐CVD method has potential for exploring new functional materials and devices. However, due to the easy availability of oxidizability by high‐temperature water , most of the previous reports of the mist‐CVD method are on oxide materials .…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

Uno

Asano

Tanaka

2016

Physica Status Solidi (b)

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Photoluminescence (PL) thermal quenching properties of zinc sulfide (ZnS) films, which were grown by mist chemical vapor deposition (mist‐CVD), were systematically investigated. The samples were grown from thiourea‐based solutions at various temperatures. Strong PL emissions related to S vacancies were observed from the sample grown at 600 and 700 °C and their thermal quenching properties were very small. PL spectra from the sample grown at 500 °C contains zinc oxide (ZnO) related peaks. The ZnO related PL peaks has almost no energy shift with the increase of temperature. This would be due to the mismatch of thermal expansion coefficient between ZnS and ZnO.

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“…Due to the easy availability of oxidation by high-temperature water, 3) most of the previous reports on mist-CVD methods focused on oxide materials, such as ZnO, 1,2) Ga 2 O 3 , 4,5) Fe 2 O 3 , 5) SnO 2 , 6) or SiO 2 . 7) Regarding the growth of sulfide materials by mist-CVD, we have reported successful growths of zinc sulfide (ZnS) by a mist-CVD method using zinc chloride (ZnCl 2 ) and thiourea [(NH 2 ) 2 CS] mixed aqueous solutions as sources. 8) The growth dynamics of mist-CVD remains controversial.…”

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confidence: 99%

Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

Uno

Yamasaki

Tanaka

2016

Appl. Phys. Express

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The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

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Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources

Cited by 11 publications

References 29 publications

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates

Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

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Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources

Cited by 11 publications

References 29 publications

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates

Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

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Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n⁺-Si(100) substrates