Fabrication of silicon oxycarbide-based microcomponents via photolithographic and soft lithography approaches

Martínez-Crespiera, Sandra; Ionescu, Emanuel; Schlosser, Michael; Flittner, Klaus; Mistura, Giampaolo; Riedel, Ralf; Schlaak, Helmut F.

doi:10.1016/j.sna.2011.04.041

Cited by 36 publications

(25 citation statements)

References 37 publications

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“…ceramization, also called mineralization process), exclusively. [ 49,53 ] The data relative to the weight loss of the pure solvents, as well as that of the solvent mixture demonstrate that in the modifi ed silicone resin (MK+TMSPM), after drying at 60 °C, some residual Dowanol is retained, while the more volatile THF has been already mostly eliminated.…”

Section: Communicationmentioning

confidence: 98%

Stereolithography of SiOC Ceramic Microcomponents

et al. 2015

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Section: Communicationmentioning

confidence: 98%

Stereolithography of SiOC Ceramic Microcomponents

et al. 2015

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“…Recently, polymer-derived ceramics (PDCs) have attracted great attention because of their corrosion resistances and high thermal stabilities. 1,2 The application of PDCs in hightemperature sensors, 3,4 lithium ion batteries, [5][6][7] and microelectromechanical systems [8][9][10] has been exploited. The electronic properties of PDCs have been suggested to depend on the concentration of nanosized carbon clusters (named "free carbon") in the PDCs.…”

Section: Introductionmentioning

confidence: 99%

SiCNO–GO composites with the negative temperature coefficient of resistance for high‐temperature sensor applications

Huang

Rhodes

et al. 2016

J Am Ceram Soc.

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We report the synthesis of silicon oxycarbonitride ceramic‐graphene oxide (SiCNO–GO) composites by using polyvinylsilazne (PVSZ) and GO as precursors through cross‐linking processes, in which GO organizes into microspheres in the SiCNO matrix. The formation of GO microspheres significantly enhances the electrical conductivity of SiCNO. The electrical resistivity of SiCNO–GO composites shows a negative temperature coefficient in the range from 25°C to 600°C. We demonstrate the application of SiCNO–GO composites as the functional component of high‐temperature sensors.

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“…The use of PDC for the fabrication of MEMS was proposed by Liew et al [2]. Different routes to shape PDC materials have been investigated and the main fabrication approaches reviewed by M. Schulz et al [3] are: moulding [2,[4][5][6], photolithography [7][8][9] and nanostereolithography [10]. During the thermal processes, the increase of bonds and the gas release from the PDC induces an overall linear shrinkage of about 25%.…”

Section: Introductionmentioning

confidence: 99%