Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Li, Hai; Yin, Zongyou; He, Qiyuan; Li, Hong; Huang, Xiao; Lü, Gang; Fam, Derrick Wen Hui; Tok, Alfred Iing Yoong; Zhang, Qing; Zhang, Hua

doi:10.1002/smll.201101016

Cited by 1,433 publications

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“…Transistors made from single-and few-layer MoS 2 sheets have been demonstrated to be sensitive detectors for NO gas 161 . The detection mechanism is probably due to p-doping induced by the adsorbed NO, changing the resistivity of the intrinsically n-doped MoS 2 .…”

Section: Molecular Sensing Applicationsmentioning

confidence: 99%

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

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699M any two-dimensional (2D) materials exist in bulk form as stacks of strongly bonded layers with weak interlayer attraction, allowing exfoliation into individual, atomically thin layers 1 . The form receiving the most attention today is graphene, the monolayer counterpart of graphite. The electronic band structure of graphene has a linear dispersion near the K point, and charge carriers can be described as massless Dirac fermions, providing scientists with an abundance of new physics 2,3 . Graphene is a unique example of an extremely thin electrical and thermal conductor 4 , with high carrier mobility 5 , and surprising molecular barrier properties 6,7 .Many other 2D materials are known, such as the TMDCs 8,9 , transition metal oxides including titania-and perovskite-based oxides 10,11 , and graphene analogues such as boron nitride (BN) 12,13 . In particular, TMDCs show a wide range of electronic, optical, mechanical, chemical and thermal properties that have been studied by researchers for decades 9,14,15 . There is at present a resurgence of scientific and engineering interest in TMDCs in their atomically thin 2D forms because of recent advances in sample preparation, optical detection, transfer and manipulation of 2D materials, and physical understanding of 2D materials learned from graphene.The 2D exfoliated versions of TMDCs offer properties that are complementary to yet distinct from those in graphene. Graphene displays an exceptionally high carrier mobility exceeding 10 6 cm 2 V -1 s -1 at 2 K (ref. 16) and exceeding 10 5 cm 2 V -1 s -1 at room temperature for devices encapsulated in BN dielectric layers 5 ; because pristine graphene lacks a bandgap, however, fieldeffect transistors (FETs) made from graphene cannot be effectively switched off and have low on/off switching ratios. Bandgaps can be engineered in graphene using nanostructuring [17][18][19] , chemical functionalization 20 and applying a high electric field to bilayer graphene 21 , but these methods add complexity and diminish mobility. In contrast, several 2D TMDCs possess sizable bandgaps around 1-2 eV (refs 9,14), promising interesting new FET and optoelectronic devices.TMDCs are a class of materials with the formula MX 2 , where M is a transition metal element from group IV (Ti, Zr, Hf and so on), group V (for instance V, Nb or Ta) or group VI (Mo, W and so on), and X is a chalcogen (S, Se or Te). These materials form layered structures of the form X-M-X, with the chalcogen atoms in two hexagonal planes separated by a plane of metal atoms, as shown in Fig. 1a. Adjacent layers are weakly held together to form the bulk crystal in a variety of polytypes, which vary in stacking orders and metal atom coordination, as shown in Fig. 1e. The overall symmetry of TMDCs is hexagonal or rhombohedral, and the metal atoms have octahedral or trigonal prismatic coordination. The electronic properties of TMDCs range from metallic to semiconducting, as summarized in Table 1. There are also TMDCs that exhibit exotic behaviours such as charge density waves ...

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Section: Molecular Sensing Applicationsmentioning

confidence: 99%

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

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“…Recently, various basic electronic components have been demonstrated based on few-layer MoS 2 , such as field-effect transistors (FETs) 13,14,15 , sensors 16 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 .…”

Section: Two-dimensional (2d) Materials Such As Molybdenum Disulfidementioning

confidence: 99%

Integrated Circuits Based on Bilayer MoS₂ Transistors

et al. 2012

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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS 2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS 2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS 2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-byside on a single sheet of bilayer MoS 2 . Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. Keywords: molybdenum disulfide (MoS 2 ), transition metal dichalcogenides (TMD), Two-dimensional (2D)electronics, integrated circuits, ring oscillator.2 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ) 1 and other members of the transition metal dichalcogenides family, represents the ultimate scaling of material dimension in the vertical direction. Nano-electronic devices built on 2D materials offer many benefits for further miniaturization beyond Moore's Law 2,3 and as a high-mobility option in the emerging field of large-area and low-cost electronics that is currently dominated by low-mobility amorphous silicon 4 and organic semiconductors 5,6 . MoS 2 , a 2D semiconductor material, is also attractive as a potential complement to graphene 7,8,9 for constructing digital circuits on flexible and transparent substrates, while its 1.8 eV bandgap 10,11 is advantageous over silicon for suppressing the source-to-drain tunneling at the scaling limit of transistors 12 . Molybdenum disulfide (MoS 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 . The strong intra-layer covalent bonds confer MoS 2 crystals excellent mechanical strength, thermal stability up to 1090 C in inert environment 21 , and a surface free of dangling bonds. On the other hand, the weak inter-layer Van der Waal's force allows single-or fewlayer MoS 2 thin films to be created through micro-mechanical cleavage technique 22 and through anisotropic 2D 3 growth by chemical vapor deposition 23,24 . This unique property of MoS 2 , and 2D ...

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“…[1][2][3][4][5] However, over the last few years, it has become clear that a range of other inorganic layered compounds can be mechanically exfoliated in small quantities to give 2-dimensional nanosheets with interesting properties. [6][7][8][9][10] For example, exfoliated hexagonal boron nitride has been used as a dielectric support in graphene-based transistors 11 while MoS 2 has been fabricated into sensors 10,12 , transistors [13][14][15] and integrated circuits. 16 The availability of a wide range of 2-dimensional materials is important as it allows access to a broad palette of physical and chemical properties.…”

Section: Toc Figmentioning

confidence: 99%

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

et al. 2012

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Abstract:We have studied the dispersion and exfoliation of four inorganic layered compounds, WS 2 , We found that the dispersed concentration of each material falls exponentially with  as predicted by solution thermodynamics. This work shows that solution thermodynamics and specifically solubility parameter analysis can be used as a framework to understand the dispersion of 2-dimensional materials. Finally, we note that in good solvents such as 2 cyclohexylpyrrolidone, the dispersions are temporally stable with >90% of material remaining dispersed after 100 hours. ToC figOver the last decade, 2-dimensional nanomaterials have become one of the most studied subfields of nanoscience. These developments have been spearheaded by research into graphene, a material that is unique due to its combination of thermal, electronic, optical and mechanical properties. 1-5 However, over the last few years, it has become clear that a range of other inorganic layered compounds can be mechanically exfoliated in small quantities to give 2-dimensional nanosheets with interesting properties. 6-10 For example, exfoliated hexagonal boron nitride has been used as a dielectric support in graphene-based transistors 11 while MoS 2 has been fabricated into sensors 10, 12 , transistors 13-15 and integrated circuits. 16 The availability of a wide range of 2-dimensional materials is important as it allows access to a broad palette of physical and chemical properties. A good example is provided by the family of transition metal dichalcogenides (TMDs). These materials have the chemical composition MX 2 where M is a transition metal (commonly, but not limited to Ti, Nb, Ta, Mo, W) and X is a chalcogen (i.e. S, Se, Te). As in graphite, these atoms are covalently bonded into nanosheets which stack into 3-dimensional crystals by van der Waals interactions. These materials are of particular interest because, depending on the combination of metal and chalcogen, the material can be semiconducting or metallic. 17 In addition, the bandgap can vary from a few hundred meV to a few eV, 17 suggesting these materials have potential as versatile electronic device materials.Furthermore, these materials have interesting electrochemical properties which make them suitable for applications such as battery electrodes. 18,19 As with graphene, many applications will require relatively large quantities of material suggesting that a solution processing route is required. 20 A number of possibilities exist. For example, it has been known for many years that materials such as MoS 2 can be exfoliated by 3 lithium intercalation. 21 However, such a route tends to result in structural deformations in some TMDs leading to considerably altered electronic properties. 22 Alternatively, TMDs can be synthesised in the liquid phase. 7,8 Probably the simplest route to liquid exfoliation of layered compounds is sonication assisted exfoliation in solvents [23][24][25][26][27][28][29] or aqueous surfactant solutions. 19,[30][31][32] Here, sonication results in the exfoliation of the ...

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Fabrication of Single‐ and Multilayer MoS₂ Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Cited by 1,433 publications

References 38 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Integrated Circuits Based on Bilayer MoS₂ Transistors

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

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Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Cited by 1,433 publications

References 38 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Integrated Circuits Based on Bilayer MoS2 Transistors

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds

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Fabrication of Single‐ and Multilayer MoS₂ Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Integrated Circuits Based on Bilayer MoS₂ Transistors