Fabrication of site-controlled metal dot array by electron beam surface modification

Tsutsui, Kazuo; Uejima, Kazuya; Kawasaki, Koji

doi:10.1016/s0167-9317(96)00104-9

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…In this work, we present results concerning metallic gallium 3D structures, and in particular micrometric gallium droplets. In the literature, some gallium droplets obtained intentionally [9,10] or not [11][12][13][14] have already been reported. But, to our knowledge, none of them has been morphologically and structurally described.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Imhoff

Sacilotti

Courty

et al. 2004

phys. stat. sol. (c)

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This study is concerned with the growth and characterization of metallic gallium 3D structures, obtained with a single growth step, by the LP-MOCVD technique on various substrates. Commercial organometallic is used as gallium precursor and nitrogen as carrier gas. The growth temperature and the reactor pressure are ranking between 500 and 700 °C, and between 150 and 700 torr, respectively. Depending on the elaboration conditions, different 3D structures are obtained such as droplets, cauliflowers, aggregates or thin stems, with micrometer sizes. The morphology, substrate surface density and thermal stability are studied by optical and scanning electron microscopy. At last, X-ray microanalysis and X-ray diffraction are carried out in order to determine the elemental composition and the crystallographic structure of these 3D objects.

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Section: Introductionmentioning

confidence: 99%

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Imhoff

Sacilotti

Courty

et al. 2004

phys. stat. sol. (c)

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Chemical characterization of gallium droplets grown by LP-MOCVD

Imhoff

Heintz

Gauthier

et al. 2006

Applied Surface Science

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Artificial Control of Dot Sites for Ga Droplet Arrays on CaF₂ Films by Surface Steps and Electron Beam Modifications

Uejima

Takeshita

Kawasaki

et al. 1997

Jpn. J. Appl. Phys.

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Spontaneous loss of charge by charged black holes by means of pair-creation of charged Dirac particles is considered. We provide three examples of exact calculations for the spontaneous discharge process for 4D charged black holes by considering the process on three special non-rotating de Sitter black hole backgrounds, which allow to bring back the problem to a Kaluza-Klein reduction. Both the zeta-function approach and the transmission coefficient approach are taken into account. A comparison between the two methods is also provided, as well as a comparison with WKB results. In the case of non-zero temperature of the geometric background, we also discuss thermal effects on the discharge process.ArXiv ePrint: 0906.1520 JHEP08(2009)028 determines a negative energy potential which at classical level must be discarded. However, at quantum level, negative energy states must be included, and a quantum interpretation to this couple of potentials can be given. The positive energy potential determines the allowed positive energy states, whereas the negative energy potential determines the allowed negative energy states. The usual separation of these states occurring in absence of external fields is not ensured a priori, and there can be regions where an overlap of positive and negative states for the particle is allowed, i.e. the Klein paradox takes place. In these level-crossing regions, by means of tunneling between negative and positive states, pair production of charged particles can take place with a rate determined by the transmission probability for the particle to cross the forbidden region between the two potentials, and can be computed e.g. in the WKB approximation.We improved this semiclassical picture in the case of anti de Sitter Reissner-Nordström black holes showing that the potentials have a direct interpretation at the quantum level without referring to the classical H-J equation [11]. Then, for the class of de Sitter Reissner-Nordström black holes we found that level-crossing is always present, due to the peculiar occurrence of both a black hole event horizon and a cosmological event horizon [12], and we also considered a particular limit case, when the black hole horizon radius r + equates the cosmological horizon radius r c : the Nariai black hole [13][14][15]. The aforementioned class of solutions contains further limit cases, corresponding to the extremal cases r − = r + = r c , which are called ultracold solutions of type I and II [13,15]. A careful WKB analysis was also performed for the Nariai case and the ultracold ones.Herein, we develop our analysis of the pair-creation process associated with the black hole electrostatic field, and fully exploit the fact that the aforementioned special backgrounds allow an exact calculation of the vacuum instability. As a consequence, we can provide for the first time, to our knowledge, exact results for the instability of 4D charged black holes. We point out that our backgrounds are of a special character: in all the cases the geometry involved is the one o...

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Fabrication of site-controlled metal dot array by electron beam surface modification

Cited by 3 publications

References 11 publications

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Chemical characterization of gallium droplets grown by LP-MOCVD

Artificial Control of Dot Sites for Ga Droplet Arrays on CaF₂ Films by Surface Steps and Electron Beam Modifications

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Fabrication of site-controlled metal dot array by electron beam surface modification

Cited by 3 publications

References 11 publications

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Structural characterization of original 3D gallium structures grown by LP‐MOCVD

Chemical characterization of gallium droplets grown by LP-MOCVD

Artificial Control of Dot Sites for Ga Droplet Arrays on CaF 2 Films by Surface Steps and Electron Beam Modifications

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Artificial Control of Dot Sites for Ga Droplet Arrays on CaF₂ Films by Surface Steps and Electron Beam Modifications