2011
DOI: 10.1063/1.3672045
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Fabrication of sub-10 nm gap arrays over large areas for plasmonic sensors

Abstract: We report a high-throughput method for the fabrication of metallic nanogap arrays with high-accuracy over large areas. This method, based on shadow evaporation and interference lithography, achieves sub-10 nm gap sizes with a high accuracy of 61.5 nm. Controlled fabrication is demonstrated over mm 2 areas and for periods of 250 nm. Experiments complemented with numerical simulations indicate that the formation of nanogaps is a robust, self-limiting process that can be applied to wafer-scale substrates. Surface… Show more

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Cited by 78 publications
(84 citation statements)
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“…For the 80 nm thick Au layers and gap sizes below 15 nm, the SERS intensity increases strongly due to stronger coupling between the crescents forming a nanogap channel. 29 …”
Section: Resultsmentioning
confidence: 99%
“…For the 80 nm thick Au layers and gap sizes below 15 nm, the SERS intensity increases strongly due to stronger coupling between the crescents forming a nanogap channel. 29 …”
Section: Resultsmentioning
confidence: 99%
“…Similarly to the reflectance, the SERS signal strongly depends on the polarization. 39 A maximum is observed for a gap of 55 ± 1.5 nm, and the corresponding value of the modulation damping parameter is 0.24. This value is in very good agreement with our universal theoretical prediction of maximal energy storage for 1/4, confirming experimentally the validity of the existence of a critical coupling for optimal nearfield enhancement.…”
mentioning
confidence: 89%
“…27 Precise control of gap sizes even below 10 nm was obtained for both 1D and 2D periodic arrays of different thicknesses, without the need of further fabrication steps such as lift-off and etching which would jeopardize sub-10 nm accuracy. 21 The Au is evaporated at grazing angles onto a grating pattern of transparent HSQ photoresist, such that by shadowing the opposite grating sidewall an elongated vertical channel with nanometric width is obtained (schematic and details in Figure S1 of the Supporting Information). 21 The gap size is primarily defined by the resist mask dimensions, the angle of incidence, and the deposition thickness.…”
Section: −24mentioning
confidence: 99%
“…21 The Au is evaporated at grazing angles onto a grating pattern of transparent HSQ photoresist, such that by shadowing the opposite grating sidewall an elongated vertical channel with nanometric width is obtained (schematic and details in Figure S1 of the Supporting Information). 21 The gap size is primarily defined by the resist mask dimensions, the angle of incidence, and the deposition thickness. For a given metal thickness, the gap size is varied by changing the duty cycle of the resist pattern with the exposure and development time.…”
Section: −24mentioning
confidence: 99%
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