Fabrication of sub-100 nm patterns in SiO₂ templates by electron-beam lithography for the growth of periodic III–V semiconductor nanostructures

Abstract

We report on the fabrication process of SiO 2 templates with periodic sub-100 nm patterns by electron-beam (e-beam) lithography followed by reactive ion etching. One-dimensional and two-dimensional periodic patterns were defined in 350 nm polymethylmethacrylate resist by e-beam lithography, and then transferred into 100 nm SiO 2 layers which were coated on GaAs or GaN/sapphire substrate. Patterns including line arrays and square/hexagonal hole arrays were obtained in the SiO 2 layers with sizes ranging from 100 nm to 52 nm in width or diameter. A pattern size deviation of less than 4% in a hole array of 100 µm by 100 µm was achieved. The patterned SiO 2 layers can serve as templates for the growth of periodic III-V semiconductor nanostructures. In this work, periodic InGaN nanowires and nanodots with high optical quality have been fabricated successfully by using the SiO 2 templates on GaN/sapphire.

Control of zinc oxide nanowire array properties with electron-beam lithography templating for photovoltaic applications

“…Future research can pair larger ZnO seed layer grains with transparent or flexible substrates and take advantage of parallel lithographic approaches such as nano-imprint lithography [42], self-assembled microspheres [43] or low-cost optical interference lithography [44]. Beyond ZnO nanowire QD PVs, this work is widely applicable in other fields, such as nanomechanical energy generators, surface-energy engineering, nanowire transistors, and templated growth of other inorganic nanowires [45][46][47][48]. …”

Highly Ordered Anodic Porous Alumina Formation by Self‐Organized Anodizing

“…The fabrication of highordered nanostructures with the periodicity less than 50 nm is beyond what a conventional optical lithography could afford [39,40]. Advanced non-optic lithographic techniques, such as electron-beam [41][42][43][44][45], ion-beam [46,47], X-ray [48], interference or holographic lithographies [49][50][51], can replicate patterns with a sufficient resolution of few nanometers, but required sophisticated facilities. Moreover, the high cost of lithographic equipment makes these techniques unavailable to many researchers.…”

CVD growth of InGaN nanowires

“…Kim et al used hydride vapor phase epitaxy (HVPE) to grow InGaN nanorods and fabricated high-brightness LED based on InGaN nanorods [3][4][5][6][7]. Metal-organic chemical vapor deposition (MOCVD) [8][9][10][11][12][13][14][15][16][17] and molecular beam epitaxy (MBE) [18][19][20][21] were also used to grow InGaN-based nanostructures. Compared with MBE and MOCVD, etc., CVD equipment has the advantage of low cost.…”