1989
DOI: 10.1063/1.102001
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Fabrication of thin-film metal nanobridges

Abstract: Thin-film fabrication techniques for forming three-dimensional ‘‘point contacts’’ are presented. As-fabricated nanobridges can be modified using electromigration to make the constriction region smaller or dirtier. Scientific applications to quantum transport studies, 1/f noise, and electromigration are discussed.

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Cited by 101 publications
(66 citation statements)
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“…The experimental challenge in effecting this strategy comes from the fact that thẽ 100 nm diameter (not shown) is created. Initially we used a combination of e-beam lithography and reactive ion etching to create these structures in a technique developed by Ralls et al 14 , but we now routinely use a Focused Ion Beam (FIB) machine 13 . Ion Beam Sculpting System.…”
Section: Methodsmentioning
confidence: 99%
“…The experimental challenge in effecting this strategy comes from the fact that thẽ 100 nm diameter (not shown) is created. Initially we used a combination of e-beam lithography and reactive ion etching to create these structures in a technique developed by Ralls et al 14 , but we now routinely use a Focused Ion Beam (FIB) machine 13 . Ion Beam Sculpting System.…”
Section: Methodsmentioning
confidence: 99%
“…1(a) were fabricated as follows [10]: First electron-beam lithography and reactive-ion etching were used to make a bowl-shaped hole in a suspended silicon nitride membrane, with an orifice between 5 and 10 nm in diameter [79]. The gate electrode was formed by evaporating 12 nm of Al onto the flat [bottom in Fig.…”
Section: Device Fabricationmentioning
confidence: 99%
“…[12][13][14] This technique relies on the fact that single ion bombardment of polycarbonate foils produces a track that can be subsequently chemically etched in a basic medium, such as NaOH. Although channels as small as a few nanometers can be formed, they have the disadvantage of possessing a high aspect ratio since the used foils have thicknesses of the order of 10 m. Ralls et al 15 fashioned 10 nm pores in free-standing Si 3 N 4 membranes using electron-beam lithography and time-controlled reactive ion etching that is stopped right after the pores are formed. Manipulation of material transport with a focused Ar + -ion beam was studied by Li et al 9 in order to close prefabricated pores in Si 3 N 4 membranes.…”
mentioning
confidence: 99%