We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed a electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

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We report the realization and demonstration of novel semiconductor waveguide-coupled microcavity ring and disk resonators. For a 10.5-microm-diameter disk resonator, we measure a finesse of 120, a resonant linewidth of 0.18 nm, and a free-spectral range of 21.6 nm in the 1.55-mum-wavelength region. We present the nanofabrication methods and the experimental results for 10.5- and 20.5-mum-diameter ring and disk resonators to show the feasibility of such devices.

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Thin-film fabrication techniques for forming three-dimensional ‘‘point contacts’’ are presented. As-fabricated nanobridges can be modified using electromigration to make the constriction region smaller or dirtier. Scientific applications to quantum transport studies, 1/f noise, and electromigration are discussed.