Fabrication of thin-film transistor based on self-assembled single-walled carbon nanotube network

Liu, Xiaodong; Chen, Changxin; Sharma, Poonam; Zhang, Liying; Wang, Ying; Hu, Nantao; Song, Chuanjuan; Wei, Liangming; Liu, Qinran; Zhang, Yafei

doi:10.1016/j.physe.2015.07.036

Cited by 9 publications

(5 citation statements)

References 22 publications

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“…The scanning electron micrograph (SEM) in Fig. 1 are presents the random distribution of the SWNT network (density of ~1.4 μm −2 ) on wafer fabricated using a self-assembly technique 20 (detailed in the Methods section). Figure 1b shows the UV-Vis-NIR absorption spectra for the pristine, OA, and PEI doped SWNT network.…”

Section: Resultsmentioning

confidence: 99%

A p-i-n junction diode based on locally doped carbon nanotube network

Liu

Chen

Wei

et al. 2016

Sci Rep

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A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

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Section: Resultsmentioning

confidence: 99%

A p-i-n junction diode based on locally doped carbon nanotube network

Liu

Chen

Wei

et al. 2016

Sci Rep

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“…The densities of SWCNT network have been examined as a function of concentration and assembly time. It has been detected that the density of SWCNT network increases from 0.6 mm 2 to 2.1 mm 2 , as the average on-state current (Ion) increases from 0.5 mA to 1.47 mA [36].…”

Section: Applications Of Nanoelectronics Related To Carbon-based Matementioning

confidence: 99%

Aspects of Nanoelectronics in Materials Development

Pandey¹,

Rawtani²,

Agrawal³

2016

Nanoelectronics and Materials Development

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Nanotechnology is an enabling technology that potentially impacts all aspects of the chip-making practice from materials to devices, to circuits, and to system-level architecture. Nanoelectronics is an interdisciplinary division which refers to the use of nanotechnology in electronic components. The materials and devices used in nanoelectronics are so small that the interatomic interactions and quantum mechanical properties of such materials need to be studied extensively. Various electronic devices manufactured at nanoscale have been established devices having negative differential resistance, switches which can be electrically configured, tunneling junctions, carbon nanotube CNT transistor, and unimolecular transistor. Some devices have also been linked together to form circuits proficient of performing functions such as logic functions and basic memory. Some of the widely used materials in nanoelectronics include zero-dimensional materials like quantum dots one-dimensional materials like nanotubes and nanowires nanoclusters and nanocomposites carbon-based materials like carbon nanotubes CNTs , fullerenes and graphene etc. Plastic C nanoelectronics is also a prominent research area with collaboration between the materials science, chemistry, physics, nanotechnology, and engineering communities. "s one of the most promising contenders, C nanostructures, either D graphene or quasi-D CNTs, have unlocked entirely new standpoints concerning the C-based electronics. This chapter focuses on the approaches of nanotechnology toward nanoelectronics, materials used in nanoelectronics and the applications of nanoelectronics related to carbon-based materials in the field of thin-film transistors, printed electronics PE , artificial skin and muscle, wearable electronics, flexible gas sensors, multifunctional and responsive elastomers, and plastic solar panels.

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“…Once dispersed CNTs can be deposited onto a variety of substrates using spin-coating 3,[44][45][46][47] , vacuum-filtration 36,[48][49][50][51] , or incubation 6,10,18,39,52 . Incubation or dropcasting is among the simplest methods as it only involves functionalizing the substrates with molecules such as (3-Aminopropyl) triethoxysilane (APTES) 4,46,[53][54][55] , or poly-L-lysine (PLL) 7,8,10,32,56 and then covering or immersing them in a dispersion of CNTs. In this thesis solution deposition on PLL coated surfaces has been used and this method has also been modified by preforming deposition in a humid environment to better control network morphology as will be discussed in Section 3.3.4.…”

Section: List Of Tablesmentioning

confidence: 99%

“…This means that there has been no work done on tailoring the metallic content of CNT networks precisely. Coverage control has been demonstrated with drop casting by either controlling deposition time 6,7,9,54,58 or dilution of the solution 59 neither of which are precise methods. Usually, high coverage is desired to increase the device current and therefore precise means of coverage control is also lacking.…”

Section: List Of Tablesmentioning

confidence: 99%

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Fabrication and Characterisation of a Carbon Nanotube Field Effect Transistor Aptasensor Platform

Happe

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Carbon nanotube field effect transistors (CNT FETs) are known to be viable platforms for aptasensors, a type of biosensor. Little work has been done in determining the relationship between the CNT network and aptasensor sensitivity. This is partly due to the unavailability of fabrication methods to control CNT network semiconducting purity, CNT bundling, and CNT coverage. CNT FETs will have electrical properties which are related to their semiconducting purity and their network morphologies, specifically the amount of CNT bundling and CNT network coverage. It is expected that for unbundled CNT networks that at certain semiconducting purities and network densities that metallic-semiconducting (m-s) junctions will dominate conduction. These m-s junctions are known to be important to aptasensor sensitivity.In this thesis a new automated atomic force microscopy (AFM) analysis method to characterize CNT bundling and network coverage has been developed. The automated AFM analysis method uses a custom written MATLAB program which fits the height histograms of the images to Gaussian peaks. The positions and areas of the Gaussian peaks can be used to calculate average CNT bundle diameter and coverage. The automated AFM analysis method has been demonstrated to be able to the determine average CNT bundle diameters in CNT networks of various morphologies, which can be used to determine the presence of any CNT bundling in the networks. The average bundle diameters characterized by the automated method were found to be lower than the true average bundle diameters determined from manual tracing. Although automated analysis does not determine true average bundle diameter the average bundle diameters determined form automated analysis were found to be related to the true average bundle diameter and therefore can be used to compare across networks. The automated AFM analysis method has also been demonstrated to be able to estimate CNT network coverage. The automated method does not provide the true coverage of the CNTs as it includes broadening of the CNTs due to the AFM tip but does provide a value which will depend on network coverage allowing for comparison between networks of different CNT densities.Various rounds of CNT network deposition have been performed with the intent of depositing unbundled CNT networks of varying CNT coverage and semiconducting purity. The fabrication rounds have been characterized using the new automated AFM analysis method. It has been found that unbundled CNTs can be deposited using aqueous surfactant CNT dispersions purchased from NanoIntegris, IsoNanotubes, deposited onto SiO2 functionalized with poly-L-lysine (PLL) as an adhesive for the CNTs. This method of deposition was found to be unable to deposit CNTs at a uniform and controlled coverage due to the coffee-ring effect, an effect that causes the dispersed CNTs to travel to the edge of a drying drop. It was also found that this deposition method is unable to deposit metallic CNTs from metallic IsoNanotubes solution, possibly due to the different surfactants used to disperse the metallic CNTs. It was found that a variation on the deposition method which involves doing deposition in a humid environment has allowed for better coverage control, and for metallic CNTs to be deposited at greater densities. Deposition of a network of 90% semiconducting CNTs followed by a network of 99% semiconducting CNTs has been demonstrated which may be able to be used to vary semiconducting purity.Raman spectroscopy has been performed on the CNT networks made from various semiconducting purities: 99.9% semiconducting, 90% semiconducting, and 99% semiconducting with 90% metallic CNT spiking. Raman spectroscopy has been able to verify the CNT diameter ranges given by the supplier, 1.2 nm to 1.7 nm. Raman spectroscopy has also been able to verify network uniformity in terms of coverage and amount of bundling that had been characterized by AFM. Peaks associated with metallic CNTs have been identified in the G-bands with two laser energies, 2.41 eV and 1.96 eV, which are resonant with mostly semiconducting and mostly metallic CNTs respectively. These peaks have been able to confirm the addition of metallic CNTs for the 99% semiconducting networks which have been spiked with 90% metallic CNTs but more work is needed to correlate the peaks to actual metallic network purity.Finally, CNT FETs fabricated from the CNT networks have been characterized electrically and used for sensing of adenosine and phenylalanine. It was found that the CNT FET characteristics of the 99.9% and the 90% networks did not vary significantly. Both had low subthreshold swings when gated using an ionic liquid gate, below 100 mV/dec. It was found that in some cases subthreshold swings were higher due to the presence of bundling in the networks. Both 99.9% and 90% semiconducting CNT FETs have been using for the sensing of adenosine, and both showed a maximum response at an adenosine concentration of 100 pM. Current responses at the 100 pM adenosine additions ranged from 1 nA to 30 nA with no differences in current response seen based on the CNT purity. Networks made with 90% semiconducting CNTs have also been demonstrated for the detection of phenylalanine.The maximum response for phenylalanine sensing was at a phenylalanine concentration of 8.5 μM, and in this case current responses at the addition were between 1 nA and 6 nA. The differences in the sensitivity of the adenosine and phenylalanine sensing are likely due to differences in the aptamer structures.

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Fabrication of thin-film transistor based on self-assembled single-walled carbon nanotube network

Cited by 9 publications

References 22 publications

A p-i-n junction diode based on locally doped carbon nanotube network

A p-i-n junction diode based on locally doped carbon nanotube network

Aspects of Nanoelectronics in Materials Development

Fabrication and Characterisation of a Carbon Nanotube Field Effect Transistor Aptasensor Platform

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