Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

Uchida, M.; Kainosho, K.; Ohta, Mitsuo; Oda, Osamu

doi:10.1007/s11664-998-0329-3

Cited by 11 publications

(3 citation statements)

References 7 publications

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“…10 Reproducible, undoped SI InP can be achieved with OWA, while MWA is very effective in improving the uniformity of electrical properties. Two of the wafers were subjected to different annealing procedures, i.e.…”

Section: Resultsmentioning

confidence: 99%

Deep centers in undoped semi-insulating InP

Fang

Uchida

Kainosho

et al. 1998

Journal of Elec Materi

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Section: Resultsmentioning

confidence: 99%

Deep centers in undoped semi-insulating InP

Fang

Uchida

Kainosho

et al. 1998

Journal of Elec Materi

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“…In order to overcome the above drawbacks, many attempts have been made to produce undoped SI-InP. [5][6][7][8][9][10][11] Recently, it has been reported that two types of semi-insulating states of undoped InP can be obtained upon high temperature annealing in pure phosphorus ͑PP͒ ambient 5,7,8,12 and in iron-phosphide ͑IP͒ ambient. [13][14][15] A great deal of investigation has been attracted to the thermally induced defects, which play important roles in the compensation process in forming SI-InP.…”

Section: Introductionmentioning

confidence: 99%

Effects of annealing ambient on the formation of compensation defects in InP

Deng

Mascher

Zhao

et al. 2003

Journal of Applied Physics

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Positron annihilation lifetime ͑PAL͒ and photoinduced current transient spectroscopies ͑PICTS͒ have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus ͑PP͒ ambience and iron phosphide ͑IP͒ ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating ͑SI͒ states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, V In H 4 complexes are the dominant defects. They dissociate into V In H n (0рnр3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V In complexes under IP ambience annealing produces the substitutional compensation defect Fe In , causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results.

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“…For the past decades, various authors have reported the preparation of undoped high resistive or SI InP by wafer annealing [8][9][10][11][12][13], but the reproducibilities have not been enough and moreover the mechanisms of semi-insulation have not been clear yet. In order to realize the reproducible preparation of extremely low Fe doped SI InP, it is necessary to determine suitable annealing conditions for it.…”

Section: Introductionmentioning

confidence: 99%

Semi-Insulating Behavior of InP Wafers Prepared by Phosphorus Vapor Pressure Controlled Wafer Annealing

Uchida

2002

phys. stat. sol. (b)

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The semi-insulating (SI) behavior of InP wafers prepared with the phosphorus-vapor-pressure controlled annealing method has been investigated. Usually, the carrier concentrations in undoped InP wafers were decreased from the order of 10 15 to 10 14 cm --3 after annealing, but a prominent SI property was not obtained due to insufficient native deep levels for pinning the Fermi level. Transport properties of extremely low Fe doped InP wafers with Fe concentration of 1.5 Â 10 15 cm --3 were converted from conductive to semi-insulating after anneals of either at 950 C for longer than 20 h or at higher than 940 C for 40 h, under the phosphorus vapor pressure of 0.1 MPa. The compensation mechanism by Shockley will explain not only the electrical activation of Fe after annealing, but also the decrease of shallow donors which are related to native defects such as phosphorus vacancies. In this paper, effective annealing conditions for realizing the reproducible production of extremely low Fe doped SI InP have been investigated systematically. Furthermore, a compensation mechanism will also be proposed in connection with it.

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Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

Cited by 11 publications

References 7 publications

Deep centers in undoped semi-insulating InP

Deep centers in undoped semi-insulating InP

Effects of annealing ambient on the formation of compensation defects in InP

Semi-Insulating Behavior of InP Wafers Prepared by Phosphorus Vapor Pressure Controlled Wafer Annealing

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