Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Tan, Jun; Chen, Zhi-Zhan; Lu, Wu-Yue; Cheng, Ya; He, Hong; Liu, Yihong; Sun, Yi‐Min; Zhao, Gao-Jie

doi:10.1186/1556-276x-9-570

Cited by 20 publications

(10 citation statements)

References 11 publications

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“…Therefore, the anodic etching process of SiC can be summarized as following: SiC is first oxidized into SiO 2 and CO 2 by taking the holes provided by the electrical bias and then SiO 2 is dissolved by HF.

SiC + 2 {normalH}_{2} O + {normalH}_{2} {normalO}_{2} + 6 {normalh}^{+} \to {SiO}_{2} + {CO}_{2} + 6 {normalH}^{+}

{SiO}_{2} + 4 HF \to {normalH}_{2} {SiF}_{6} + 2 {normalH}_{2} O

…”

Section: Resultsmentioning

confidence: 99%

“…Finally, electrical field is frequently used for wet etching as an electrochemical circuit can directly provide holes required by oxidation. As the holes provided by the electrical bias is intrinsically uniformly distributed, only porous SiC can be obtained by anodic etching . So far, fabricating SiC nanowires, which is the foundation to build 3D devices, by wet etching methods has rarely been reported.…”

Section: Introductionmentioning

confidence: 99%

“…So far, fabricating SiC nanowires, which is the foundation to build 3D devices, by wet etching methods has rarely been reported. In addition, high voltage or high current densities are usually needed to produce enough holes to etch SiC; while these conditions could damage the sample and generate a large amount heat which could then decompose the etchant and cause etchant leakage. Therefore, developing a facile approach to etch SiC with low electrical bias is in great need.…”

Section: Introductionmentioning

confidence: 99%

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Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Chen

Zhang

et al. 2019

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Silicon carbide (SiC) is widely considered as the third-generation semiconductor material due to its wide band gap, superior chemical inertness, electrical and mechanical properties (high breakdown electric field (3e6 V cm −1 ), and high electron saturationSilicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabricate nanostructures on SiC. In this work, a hybrid anodic and metalassisted chemical etching (MACE) method is proposed to fabricate SiC nanowires based on wet etching approaches at room temperature and under atmospheric pressure. Through investigations of the etching mechanism and optimal etching conditions, it is found that the metal component plays at least two key roles in the process, i.e., acting as a catalyst to produce hole carriers and introducing band bending in SiC to accumulate sufficient holes for etching. Through the combined anodic and MACE process the required electrical bias is greatly lowered (3.5 V for etching SiC and 7.5 V for creating SiC nanowires) while enhancing the etching efficiency. Furthermore, it is demonstrated that by tuning the etching electrical bias and time, various nanostructures can be obtained and the diameters of the obtained pores and nanowires can range from tens to hundreds of nanometers. This facile method may provide a feasible and economical way to fabricate SiC nanowires and nanostructures for broad applications.

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SiC + 2 {normalH}_{2} O + {normalH}_{2} {normalO}_{2} + 6 {normalh}^{+} \to {SiO}_{2} + {CO}_{2} + 6 {normalH}^{+}

{SiO}_{2} + 4 HF \to {normalH}_{2} {SiF}_{6} + 2 {normalH}_{2} O

…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Chen

Zhang

et al. 2019

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“…In previous studies presented in references [18,19], it has been demonstrated that the addition of H 2 O 2 helps to enhance the oxide formation rate.…”

Section: Electrochemical Etchingmentioning

confidence: 93%

Optimization of Etching Processes for Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology

Mokhtarzadeh¹,

Carulla²,

Kozak³

et al. 2022

SSRN Journal

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“…Silicon carbide has become a new option for improving power applications due to its characteristics of higher voltage operating at thinner active layers, extended power density, higher frequency switching, better heat dissipation, smaller system size and lower system cost [1,2]. In the past few years, commercial SiC rectifiers and MOSFETs have been rated at 1.2-1.7 kV.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Wen

Tao

et al. 2020

Nanoscale Res Lett

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A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm2 is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ VF = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm2.

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Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Cited by 20 publications

References 11 publications

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Optimization of Etching Processes for Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

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