Metal–insulator–metal
tunnel diodes have great potential
for use in infrared detection and energy harvesting applications.
The quantum based tunneling mechanism of electrons in MIM (metal–insulator–metal)
or MIIM (metal–insulator–insulator–metal) diodes
can facilitate rectification at THz frequencies. In this study, the
required nanometer thin insulating layer (I) in the MIM diode structure
was fabricated using the Langmuir–Blodgett technique. The zinc
stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon
substrates, and then heat treated by varying the temperature from
100 to 550 °C to obtain nanometer thin ZnO layers. The thin films
were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods.
The final MIM structure was fabricated by depositing chromium/nickel
over the ZnO on Au/Cr film. The current voltage (I–V) characteristics of the diode showed that
the conduction mechanism is electron tunneling through the thin insulating
layer. The sensitivity of the diodes was as high as 32 V–1. The diode resistance was ∼80 Ω (at a bias voltage
of 0.78 V), and the rectification ratio at that bias point was about
12 (for a voltage swing of ±200 mV). The diode response exhibited
significant nonlinearity and high asymmetry at the bias point, very
desirable diode performance parameters for IR detection applications.