2013
DOI: 10.1142/s0218625x13500479
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FABRICATION OF UNIFORM AND COMPACT ZnO THIN FILMS BY LANGMUIR–BLODGETT METHOD

Abstract: In this paper, stearic acid/Zn 2þ monolayer were formed at airÀwater interface and then multilayers were deposited onto a glass slide by LangmuirÀBlodgett method. After annealing at 300 C for 0.25 h and 550 C for 2 h, ZnO thin¯lms were fabricated. The optimized parameters for monolayer formation and multilayers deposition were determined by the surface pressure-surface area (Å-A) isotherm and transfer ratio (t.r.), respectively. The results of X-ray di®raction showed that multilayers changed into ZnO thin¯lms … Show more

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Cited by 4 publications
(6 citation statements)
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“…In a different work, interaction between cysteine or glutathione coated Au nanoparticles and lipid membranes were demonstrated where Au particles were deposited by LB method . Several methods have been reported previously about the fabrication of inorganic ZnO film by LB technique. A procedure similar to that reported by Feng et al was followed to fabricate the ZnO multilayers in this work . ZnO layer in MIM diode structure has been used for high–frequency rectification at power transfer efficiency at 1 THz .…”
Section: Introductionmentioning
confidence: 93%
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“…In a different work, interaction between cysteine or glutathione coated Au nanoparticles and lipid membranes were demonstrated where Au particles were deposited by LB method . Several methods have been reported previously about the fabrication of inorganic ZnO film by LB technique. A procedure similar to that reported by Feng et al was followed to fabricate the ZnO multilayers in this work . ZnO layer in MIM diode structure has been used for high–frequency rectification at power transfer efficiency at 1 THz .…”
Section: Introductionmentioning
confidence: 93%
“…27−30 A procedure similar to that reported by Feng et al was followed to fabricate the ZnO multilayers in this work. 31 ZnO layer in MIM diode structure has been used for high−frequency rectification at power transfer efficiency at 1 THz. 32 ZnO rectification abilities for resonant tunneling diode at high frequencies have been studied by Grover and Moddel, 33 and Guziewicz et al 34 In an effort to produce a MIM tunnel junction device that exhibits very high sensitivity, low resistance, and high nonlinearity, the synthesis of a thin film of inorganic ZnO has been carried out from an organic precursor, zinc acetate, using the LB method.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…5 In recent years, considerable attention has been focused on the study of such thin films fabricated by LB technique to obtain photoconductivity and large nonlinear optical responses that are regarded to be essentially important in the design of various molecular, electronic and optoelectronic devices. [6][7][8][9] Unlike other conventional methods of obtaining thin films, the LB technique offers tremendous flexibility in precisely controlling the orientation and architecture of molecules in thin films.…”
Section: Introductionmentioning
confidence: 99%