Fabrication of Vertical and Uniform-Size Porous InP Structure   by Electrochemical Anodization

Takizawa, Toshiyuki; Arai, Shigehisa; Nakahara, M.

doi:10.1143/jjap.33.l643

Cited by 120 publications

(108 citation statements)

References 7 publications

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“…4(c). This indicates that the preferred direction of dissolution is not the <001>-direction in the electrolyte A as also reported by Takizawa et al [25]. It is likely that the truly preferred direction is the <111>-direction, and that the observed <113>-direction may be a compromise between the field effect and the preferred dissolution.…”

Section: Mechanism Of Nanopore Formationsupporting

confidence: 77%

“…In our study, a maximum depth of about 80 μm was achieved by anodization for 3 min. This value is much larger than the value reported for porous layers made on (111)A n-InP surfaces which had a maximum depth of 30 μm [25][26][27].…”

Section: (A)-(d)contrasting

confidence: 59%

“…On the other hand, formation of <111>-oriented straight pores without branches were reported by Takizawa et al for (111) oriented n-InP [25][26][27].…”

Section: 1)formation Of Nanoporesmentioning

confidence: 84%

“…In III-V materials, anodization of (001)-oriented n-type GaAs and InP [21][22][23][24][25] has been reported to produce structures with lots of <111>-oriented branching [21][22][23]25] similarly to the case of porous Si or structures with submicron grains [24]. On the other hand, formation of <111>-oriented straight pores without branches were reported by Takizawa et al for (111) oriented n-InP [25][26][27].…”

Section: 1)formation Of Nanoporesmentioning

confidence: 99%

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Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>-oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. Key words:III-V semiconductors, anodic etching, nanopore, electrodeposition, Schottky barrier 1.IntroductionIt is widely recognized that artificial semiconductor nanostructures such as quantum wires (QWRs) and quantum dots(QDs) give rise to new rich functionalities to materials. They produce new quantum state spectra with novel state transitions and linear and non-linear quantum transport phenomena, and open up opportunities for novel quantum devices which control quantum-mechanical behavior of electrons and photons in various sophisticated ways.The standard approach for semiconductor nanostructure formation is to use fine crystal growth techniques such as molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). To fabricate devices, various standard etching and metal deposition techniques are used together with standard lithography techniques. However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,

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Section: Mechanism Of Nanopore Formationsupporting

confidence: 77%

Section: (A)-(d)contrasting

confidence: 59%

“…On the other hand, formation of <111>-oriented straight pores without branches were reported by Takizawa et al for (111) oriented n-InP [25][26][27].…”

Section: 1)formation Of Nanoporesmentioning

confidence: 84%

Section: 1)formation Of Nanoporesmentioning

confidence: 99%

See 2 more Smart Citations

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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“…For III -V compound semiconductors such as GaAs [2 -4], InP [5][6][7][8][9][10][11] and InSb [12], formation of porous layers and their many different properties as compared to the bulk materials have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Morphological characterization of porous InP superlattices

Tsuchiya

Hueppe

Djenizian

et al. 2004

Science and Technology of Advanced Materials

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Porous superlattices n-type (100) InP are produced electrochemically on by changing the applied current or potential periodically in 1 M HCl þ 1 M HNO 3 solutions. The superlattice consists of stack of alternating two layers with various morphologies and porosities. The planview morphologies of the top surface of superlattice were almost same, and the pore size was varied in the nano-order range. On the other hand, the cross-sectional morphologies depend strongly on the electrochemical condition. For low applied currents or potentials such as 10 mA or 1.5 V Ag/AgCl , respectively, porous layers with a facet-like structure were formed. The size of each facet did not change with the etching time, but the number of the facets increased with time. For high currents or potentials such as 50, 100 mA or 3 V Ag/AgCl , respectively, a tree-like structure with random and/or tangled branches was observed. At a still higher potential of 5 V Ag/AgCl , the porous layer exhibited fairly regular array of straight pores. Therefore, it is found that the morphology of the porous layer can be highly controlled by the applied current or potential. q

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Time-Resolved Luminescence of Porous Si and InP

Chernoutsan

Днепровский

Shaligina

et al. 2000

phys. stat. sol. (a)

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The kinetics of porous Si and InP luminescence has been investigated using short (10 ps, 2 ns and 14 ns) laser pulses for excitation, by a streak camera with 10 ps time-resolution and photomultiplier for measuring fast and slow increase and decay of the intensity of luminescence. Two luminescence bands with fast and slow decay have been registered within the usually observed single wide band in the time-resolved photoluminescence spectra of porous Si and attributed to the recombination via free excitons and the surface states in nanostructures. The time-resolved intensity of porous InP luminescence has been measured at different intensities of laser excitation. At high excitation the intensity of photoluminescence has a relatively slow increase and complicated decay. The change of the kinetic properties has been explained by numerous processes in semiconductor±dielectric quantum wires and dots: the slowing down of intraband relaxation, collective exciton±exciton (electron) interaction, Auger recombination, etc.Introduction Porous silicon has attracted the most attention of all forms of silicon nanostructures because of its intense visible photoluminescence (PL) discovered in the pioneering work of Canham [1]. Numerous physical models have been proposed to explain the PL of porous Si: 1. optical transitions in the structures with quantum confinement (quantum wires and dots), 2. transitions via localized surface states, 3. PL of different chemical species (e.g., seloxenes). Recently it was shown [2] that depending on the size of Si nanostructures the PL of porous Si can be tuned from near infrared to the ultraviolet if the surface of the sample is passivated with Si±H bonds, and that in this case the recombination is via free exciton (electron±hole) states for all sizes. But after exposure to oxygen SiO bonds are formed and the PL shifts to the red by as much as 1 eV because new electronic trap states (the trapped electron state localized on the Si atom and the trapped hole state localized on the oxygen atom) appear in the band gap of smaller nanostructures. Thus, for porous Si exposed to oxygen it is difficult to distinguish the recombination that arises due to the free exciton transitions in nanostructures from the recombination via trapped excitons.The goal of this paper is to show that the time-resolved spectra of porous Si exposed to oxygen allow to distinguish the PL conditioned both by optical transitions in nanostructures (recombination via free exciton or electron±hole states) and the surface localized states.In contrast to Si, A 3 B 5 semiconductors have a direct gap. Investigation of porous direct gap semiconductors such as GaAs, GaP, InP allows to avoid the limitations of an indirect band gap in interpretation of their properties [3±5]. The anodization of InP

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Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization

Cited by 120 publications

References 7 publications

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Morphological characterization of porous InP superlattices

Time-Resolved Luminescence of Porous Si and InP

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