Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique

Chen, Maohui; Liu, W. J.; Cai, Li-E; Zhang, J. Y.; Sun, Lin; Liang, Ming-Ming; Hu, Xiaolong; Cai, Xiaomei; Jiang, Feng; Ying, Lei; Qiu, Zhiren; Zhang, B. P.

doi:10.1149/2.011202ssl

Cited by 5 publications

(7 citation statements)

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“…There is a common feature in the observed fracture of the freestanding films shown in Fig. 2 and in our previous work [30]. It is that the cracking pattern is very similar to Bceramic fragmentation[, indicating that the properties of GaN film are consistent with that of brittle ceramic materials [32].…”

Section: Resultssupporting

confidence: 76%

“…According to Tavernier's work [35] and our previous work [30], [36], the vaporization pressure of N 2 is exponentially proportional to the laser energy density. Moreover, the number of the dislocations in the freestanding film increases with the mesa spacing.…”

Section: Resultsmentioning

confidence: 82%

“…The fabrication procedure employed for the devices is reported elsewhere [30]. Two kinds of autosplit samples (abbreviated as I-and II-sample) are studied in this study, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Inductively coupled plasma (ICP) is usually used twice for etching away the u-GaN, for electric current isolation and for defining the chip size [27]- [29]. In our recent work, a new method called auto-split LLO technique is proposed in which ICP etching is used once and the definition of chip size is completed simultaneously during the removal of the sapphire substrate by LLO [30]. However, the intrinsic mechanism of the auto-split LLO technique is still not fully understood and the factors influencing the auto-split technique are not well studied yet.…”

Section: Introductionmentioning

confidence: 99%

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Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

et al. 2013

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An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaNbased green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that of conventional LEDs on sapphire. The intrinsic physical mechanism of the auto-split LLO technique is studied by a Frank-Read dislocation clustering model. The laser energy density and mesa spacing are shown to be key factors in the auto-split LLO method. It is believed that this method offers an alternative way to fabricate high-performance GaNbased thin-film LEDs.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 82%

“…The fabrication procedure employed for the devices is reported elsewhere [30]. Two kinds of autosplit samples (abbreviated as I-and II-sample) are studied in this study, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

et al. 2013

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“…On the other hand, wafer-scale device transfer processes and film transfer processes have been developed to integrate functional elements on desirable substrates by using laser debonding techniques such as the so-called laser transfer process (LTP) and laser lift-off (LLO) [12][13][14][15][16][17][18][19][20][21]. For example, AFM cantilevers were transferred from one source wafer to 42 destination wafers [12].…”

Section: Introductionmentioning

confidence: 99%

Wafer–to–wafer transfer process of barium strontium titanate for frequency tuning applications using laser pre-irradiation

Samoto

Hirano

Somekawa

et al. 2015

J. Micromech. Microeng.

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This paper describes laser-assisted film transfer technology for barium strontium titanate (BST) deposited on a sapphire substrate. BST is a promising ferroelectric material for varactors, which are required for frequency-tunable RF applications. However, the deposition temperature of BST (600 ~ 700 °C) is too high for surface acoustic wave (SAW) substrates. In this study, BST grown on a sapphire substrate at 650 °C was transferred at low temperature (140 °C) to a borosilicate glass substrate as well as a LiTaO3 substrate. The transferred BST films were characterized as tunable capacitors. A key process in the BST film transfer technology is the laser pre-irradiation of a buffer Pt layer beneath BST from the backside of the sapphire substrate to weaken the BST-to-Pt adhesion. The mechanism of delamination at the BST/Pt interface is discussed using a simple 1D heat transfer model.

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Laser Lift-Off (LLO) Process for Micro-LED Fabrication

Kim

2021

Series in Display Science and Technology

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Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique

Cited by 5 publications

References 0 publications

Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

Wafer–to–wafer transfer process of barium strontium titanate for frequency tuning applications using laser pre-irradiation

Laser Lift-Off (LLO) Process for Micro-LED Fabrication

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