Individual single-wall carbon nanotubes (SWNTs) exhibited continuous-wave stimulated Raman scattering (SRS). The Raman gain is a few orders higher, and the threshold power is a few orders lower, than values ever reported for other bulk materials and is explained as the result of both the large nonlinear property and efficient electron-phonon interaction in the SWNT. The laser-induced variation of the peak position of the SRS line was likely to depend on the linewidth or tube quality. The results demonstrate the high potential of SWNTs in applications of nanoscale nonlinear optical devices such as wide-range tuneable Raman lasers.

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Photoluminescence study of ZnO∕Mg0.1Zn0.9O quantum wells with graded well width (Lw) was carried out at 4.2K. The emission evolution from quantum confinement regime to quantum-confined Stark regime was observed clearly. For large Lw, the emission splits into two peaks which are attributed to the emissions of ZnO band edge and separately localized carriers, respectively. The internal electric field in the well layer was estimated to be ∼0.3MV∕cm, being similar to previous reports. The results are useful in designing ZnO QW based optoelectronic devices.

During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

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