Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Dong, Le; Li, Yang; Lv, Jingwen; Jiang, Hongchuan; Zhang, Wanli

doi:10.3390/s21165345

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…Many groups have used different annealing treatments with different temperatures and times to change the film structure and improve performance. Then, the changes in chemical composition and crystallinity for AlN films before and after annealing were studied [9][10][11]. In this work, we show our advancements towards low-loss high-confinement sputter deposited AlN waveguides for PICs.…”

Section: Introductionmentioning

confidence: 91%

Low-loss sputter coated aluminum nitride waveguides

Mardani

Hendriks

Dijkstra

et al. 2023

Integrated Optics: Devices, Materials, and Technologies XXVII

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Photonic integrated circuits (PICs) have experienced an exponential growth in a number of applications, including telecom/datacom, LiDAR, optical sensing/metrology and quantum technology. Most materials and platforms commonly used in integrated photonics, such as silicon-on-insulator (SOI), silicon nitride (Si3N4) and indium phosphide (InP) do not show transmission below ~400 nm, hindering the development of PICs operating in the ultraviolet wavelength range. Furthermore, devices in this wavelength range also require fast modulation and switching in order to enable complex emerging applications.Aluminum nitride (AlN) is a material with a band gap of 6.2 eV, exhibiting a wide transparency window, from the ultraviolet to the mid-infrared. AlN has the capacity to achieve high electro-optic[1], non-linear[2] and piezo-electric [3,4] coefficients, which makes AlN an interesting material for PICs with operation down to the ultraviolet wavelength range. However, high losses have prevented PICs from benefiting from its excellent optical properties.In this work, we present our work on the sputter deposition of low-loss AlN slab waveguides. The optical performance of AlN sputtered slab waveguides after annealing at different temperatures and their relation with the film morphology will be discussed. Preliminary slab propagation losses as low as 1.5 dB/cm at 633 nm of wavelength have been demonstrated.

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Section: Introductionmentioning

confidence: 91%

Low-loss sputter coated aluminum nitride waveguides

Mardani

Hendriks

Dijkstra

et al. 2023

Integrated Optics: Devices, Materials, and Technologies XXVII

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“…For temperature measurement, Dong et al [ 20 ] produced a weak thin AlN layer with numerous defects. It was found that the thin film diffraction peak (002) increased monotonously with an increasing annealing temperature and an annealing time.…”

Section: Introductionmentioning

confidence: 99%

“…The methods of measuring the surface temperature of turbine blades mainly include thin-film thermocouples [ 21 , 22 , 23 ], temperature indicating paint [ 24 ], infrared radiation [ 25 , 26 , 27 ], and irradiation crystals [ 28 , 29 , 30 ]. Based on the advantages of irradiating crystals, the authors [ 20 ] proposed an easy and cheap method of temperature measurement using a thin-film crystal. It was noted that the crystal quality could be strengthened after annealing [ 31 , 32 , 33 ], indicating that the AlN thin layer is a promising material for temperature measurement.…”

Section: Introductionmentioning

confidence: 99%

Effect of Surface Topology on the Apparent Thermal Diffusivity of Thin Samples at LFA Measurements

Szczepaniak

2022

Materials

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This paper deals with the problem of the influence of surface topography on the results of thermal diffusivity measurements when determined using the instantaneous surface heat source method, also called the pulse method. The analysis was based on numerical tests carried out using Comsol Multiphysics software. The results of experimental investigations on the actual material structure using an electron microscope, an optical microscope and a profilometer were used to develop a numerical model. The influence of the non-uniformity of the surface of the tested sample on the determined values of half-time of the thermal response of the sample’s rough surface to the impulse forcing on the opposing flat surface was determined by developing the data for simulated measurements. The effect of the position of the response data reading area on the obtained simulation results was also analyzed. The obtained results can be used to improve the accuracy of experimental heat transfer studies performed on thin-film engineering structures depending on the uniformity and parallelism of the material applied to engineering structures. The difference in half-life determination error results for various analyzed models can be as high as 16.7%, depending on the surface from which the responses of the heating impulse are read. With an equivalent model in which 10% of the material volume corresponds to the rough part as a single inclusion, hemisphere, the error in determining thermal diffusivity was equal to 3.8%. An increase in the number of inclusions with smaller weight reduces an error in the determination of thermal diffusivity, as presented in the paper.

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