Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology

Guo, Daoyou; Wu, Zhenping; Li, Peigang; An, Yarui; Liu, Han; Guo, Xuncai; Yan, Hui; Wang, Guofeng; Sun, Changlong; Li, Linghong

doi:10.1364/ome.4.001067

Cited by 430 publications

(273 citation statements)

References 27 publications

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“…2(a) exhibits the out-of-plane XRD spectrum of the Ga 2 O 3 thin film grown in this work. It shows that the peaks corresponding to β-Ga 2 O 3 (201) and its higher-order diffractions were dominant, 3,17 which can be ascribed to the high similarity of oxygen atom arrangement between β-Ga 2 O 3 (201) plane and sapphire c-plane. 20 However, the diffraction peak indexed to β-Ga 2 O 3 (400) plane was also observed, indicating a polycrystalline growth.…”

Section: Resultsmentioning

confidence: 98%

“…This value is comparable to that of previously-reported β-Ga 2 O 3 interdigital MSM photoconductor, whose photo/dark current ratio was 11.4. 17 FIG sample_B (U 23_dark_B ), compared with that of sample_A (U 23_dark_A ), increases more rapidly for I 14 exceeding ∼55 nA, leading to a substantial enhancement in ∆U 23 . Accordingly, the dark/photo voltage ratio is remarkably increased, which is beneficial to improving the detection sensitivity.…”

Section: Resultsmentioning

confidence: 98%

“…As shown in the inset of FIG. 2(b), the E g of the β-Ga 2 O 3 thin film was estimated to be 5.0 eV based on Tauc law, 17 and thus its suitability for solar-blind DUV detection was proved. As shown in FIG.…”

Section: Resultsmentioning

confidence: 99%

“…13 As a result, β-Ga 2 O 3 has attracted much attention in recent years, and its characteristics of solar-blind DUV detection have been demonstrated in various device structures. [14][15][16][17] particularly promising due to its large photocurrent gain, high responsivity, easy integration with readout circuitry, etc. However, the detection characteristics could be degraded dramatically if the spacing of interdigital electrodes is not small enough.…”

Section: Introductionmentioning

confidence: 99%

“…However, the detection characteristics could be degraded dramatically if the spacing of interdigital electrodes is not small enough. 17,18 Accordingly, the electrode spacing has to be maintained as small as possible, and so a considerable portion of incident photons is blocked by the interdigital electrodes. As a result, the aperture ratio of β-Ga 2 O 3 MSM photoconductor is only 50% in general, 17,18 producing a big loss in detection efficiency.…”

Section: Introductionmentioning

confidence: 99%

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β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

et al. 2016

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A four-terminal photodetector was fabricated on the (2¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

et al. 2016

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Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

408

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Horizontally‐Oriented Growth of Organic Crystalline Nanowires on Polymer Films for In‐Situ Flexible Photodetectors with Vis‐NIR Response and High Bending Stability

Song

Wang

Liao

et al. 2023

Adv Funct Materials

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Various epitaxial mechanisms have been proposed to control the growth orientation of vapor-deposited nanowires, yet the required lattice matching between target nanowires and supporting substrates limits their applicability. In this work, a versatile hot stamping protocol for fabricating parallel hydrophobic nanogrooves on flexible polymer films (e.g., polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS)) is proposed. More interestingly, various organic small molecules, including several metal phthalocyanines (MPc, M = Cu, Zn, Fe, Ni, Co), 9,10-bis(phenylethynyl) anthracene (BPEA), 9,10-diphenylanthracene (DPA), and tris-(8-hydroxyquinoline)aluminium (Alq 3 ), are directly assembled into horizontally-oriented nanowires along the hot-stamped nanogrooves on a flexible PI film, thereby breaking the lattice-matching limitation for oriented nanowire growth. These submillimeter-long horizontally oriented nanowires can be integrated into flexible photodetectors directly on their growth film, eliminating the need for laborious post-growth transfer and alignment steps and the associated structural damage and contamination. Consequently, the in situ integrated flexible photodetector made of aligned CuPc nanowires maintains a stable and fast photoresponse to a spectrum in the region of 405-980 nm even when the detector is bent to a radius of curvature of 2.5 mm and 1000 times. This work will open new opportunities to develop in situ integrated flexible devices based on organic crystalline nanowires for practical applications.

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Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology

Cited by 430 publications

References 27 publications

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Horizontally‐Oriented Growth of Organic Crystalline Nanowires on Polymer Films for In‐Situ Flexible Photodetectors with Vis‐NIR Response and High Bending Stability

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