Fabry-Perot Lasers: Thermodynamics-Based Modeling

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

“…(c) Correction factor (32) that quantifies the deviation of the Fermi-Dirac integrals from the exponential function. The non-degenerate limit corresponds to γ (η) ≡ 1. namics [9][10][11][12][13][14]. The model equations read:…”

“…Over the decades, several definitions have been proposed for the Seebeck coefficient [20][21][22][23]; recent publications list at least five coexisting different (approximate) formulas [24,25]. In the context of semiconductor device simulation, the Seebeck coefficients are typically derived from the Boltzmann transport equation in relaxation time approximation [26][27][28] or defined according to the adage of the Seebeck coefficient being the "(specific) entropy per carrier" [13,14,18,29]. These approaches are often focused on non-degenerate semiconductors, where the carriers follow the classical Maxwell-Boltzmann statistics.…”

The analysis of factors limiting the maximum output power of broad-area laser diodes

“…In this paper, we consider only the 0th order (vertical) mode. The electron and hole densities n and p as well as the temperature distribution T are solutions of the transverse Poisson, drift-diffusion and heat-flow equations which are solved by the tool WIAS-TeSCA (Bandelow et al 2005). As a result, g m is obtained as a function of the applied bias U and the local power P and stored in a look-up table.…”

Electronic States in Semiconductor Nanostructures and Upscaling to Semi-Classical Models

“…In the following, we focus on a semi-classical carrier flow model, and on a specific part of radiative recombination; for models of the optical field, see [BGK00,BGH05,BKKR03,BHK03]. In particular, we deal with upscaling schemes for quantities such as the density of states, the optical response, and the optical peak gain, from electronic structure calculations as described in section 5.…”

“…Semi-classical models working on the device scale such as drift-diffusion equations are state of the art for the simulation of the electronic behavior of many microelectronic devices. For opto-electronic devices based on nanostructures they can be applied successfully, supposed the constitutive laws in these semi-classical models take into account quantum effects from smaller scale models for the embedded nanostructure [BGK00, BHK03,BKKR03,BGH05].…”