Fabry-Pérot transmission resonances in tunneling microscopy

Kubby, Joel; Wang, Y. R.; Greene, W. J.

doi:10.1103/physrevb.43.9346

Cited by 25 publications

(9 citation statements)

References 12 publications

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“…Similar oscillations at a low bias have been previously observed by Kubby et al in the case of first-layer subsurface vacancies in Si(111). 30 The intensity and width of such resonances are related to the lifetime of the excitation, 34 that is, to the probability for tunneling out of the well region through either of the two enclosing barriers. As shown in Figures 2 and 3a (see the m = 0 peak), these resonances are almost absent in the large region of the ring-top configuration, but are quite intense in other zones.…”

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confidence: 99%

Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene

et al. 2010

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Corresponding Author (*):renald.schaub@st-andrews.ac.uk.Resonance tunneling spectroscopy and density functional theory calculations are employed to explore local variations in the electronic surface potential of a single graphene layer grown on Rh(111). A work function modulation of 220 meV is experimentally measured, indicating that the chemical bonding strength varies significantly across the supercell of the Moiré pattern formed when graphene is bonded to Rh(111). In combination with high-resolution images, which provide precise knowledge of the local atomic registry at the carbon metal interface, we identify experimentally, and confirm theoretically, the atomic configuration of maximum chemical bonding to the substrate. Our observations are at odds with reported trends for other transition metal substrates. We explain why this is the case by considering the various factors that contribute to the bonding at the graphene/metal interface.

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confidence: 99%

Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene

et al. 2010

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“…A shift with applied bias of the standing wave resonances implies a difference in the local electrostatic field. In order to relate shifts in the resonant energies to the local electric field experienced by the injected electrons in the quasi-bound state [7,19], a simple model was considered based upon the energy eigenstates of a triangular barrier potential on the Si adatom and Se adsorbed sites in Fig.4 by considering the presence of the local surface dipole at the Se adsorbed surface. If the bias voltage is close or exceeds the work function of the tip or sample, the tunnelling gap becomes classically accessible.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, probebased spectroscopic techniques, such as current-voltage (I-V ) spectroscopy, have provided accurate methods to determine the electronic states of surfaces and surfacetrapped adsorbates [4,5]. The formation of electron standing wave resonances, formed in the vacuum gap between the tip and the sample surface, has been established using spectroscopic techniques for both metallic and semiconducting surfaces [6,7]. Because the voltage for I-V measurements is limited by the dynamic range of the STM electronics I-V converter, another technique named distance-voltage (z-V ) spectroscopy has been developed, which can be used to obtain spectroscopic information over a high voltage range since the STM feedback loop is active and maintains current as constant while the voltage changes [8].…”

Section: Introductionmentioning

confidence: 99%

Impact of Surface Dipole on Resonant Electron Injection in Scanning Tunneling Spectroscopy

Pakes

2013

Chinese Journal of Chemical Physics

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Resonant electron injection and first-principles calculations are utilized to study singleadsorbed selenium (Se) atom on a Si(111)-7×7 surface. Theoretical calculations indicate that a negative dipole of 0.61 eV forms toward the adsorbed Se atom due to electron transfer from the associated Si atoms. The formation of surface dipole modifies the effective tunneling barrier height and causes a shift in the energy of the resonant state formed in the vacuum gap between the tip and the sample surface. The experimental data imply that an outward negative surface dipole of 0.61 eV causes a resonant electron injection bias shift to high voltage of about 0.45 V.

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“…2,3 The previous works did not take the tip shape into account, which changes the electric field in the vacuum gap as a boundary condition. 2,3 The previous works did not take the tip shape into account, which changes the electric field in the vacuum gap as a boundary condition.…”

Section: Introductionmentioning

confidence: 99%

Analysis of electron standing waves in a vacuum gap of scanning tunneling microscopy: Measurement of band bending through energy shifts of electron standing wave

Suganuma

Tomitori

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inStudying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy Numerical simulation for the electron standing wave excited between a scanning tunneling microscopy ͑STM͒ tip and a sample in a field emission regime has been performed using a one-dimensional potential including a tip shape effect. It can qualitatively trace experimental results of the differential conductance (dI/dV) spectra with oscillatory peaks, which originate from the standing wave excitation. Furthermore, a band bending effect on a semiconductor surface has been evaluated including a multiple image potential in addition to a potential with a tip shape effect. By fabricating tips with a regular shape, the strength of electric field between tip and sample can be estimated from tip displacement while taking the dI/dV spectra. A band bending effect on dI/dV spectra has been evaluated to explain a parallel shift of the peaks in the spectra by the amount of band bending. We have experimentally demonstrated the shift with light irradiation to change the band bending to be flat; at least 0.4 eV upward band bending for n-type Si͑001͒ 1 ⍀ cm was estimated from the peak shift. This spectroscopic method is promising to probe the electric field in the vacuum gap between tip and sample in the STM.

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Fabry-Pérot transmission resonances in tunneling microscopy

Cited by 25 publications

References 12 publications

Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene

Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene

Impact of Surface Dipole on Resonant Electron Injection in Scanning Tunneling Spectroscopy

Analysis of electron standing waves in a vacuum gap of scanning tunneling microscopy: Measurement of band bending through energy shifts of electron standing wave

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