2018
DOI: 10.1038/s41598-018-31539-7
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Facile and scalable production of heterostructured ZnS-ZnO/Graphene nano-photocatalysts for environmental remediation

Abstract: A facile and eco-friendly strategy is described for the synthesis of ZnS-ZnO/graphene heterostructured nano-photocatalysts for the first time. This solvent-free and technologically scalable method involves solid-state mixing of graphite oxide (GO), Zn salt and surfeit yet non-toxic elemental sulfur using ball-milling followed by thermal annealing. The as-formed hybrids are composed of uniformly distributed in-situ formed ZnS-ZnO nanoparticles simultaneously within the thermally reduced GO (graphene) matrix. A … Show more

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Cited by 119 publications
(46 citation statements)
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“…Among the semiconductor based photocatalyst, ZnO and TiO 2 are widely used due to their strong oxidation capacity, chemical stability, non-toxicity, low cost etc. ZnO (3.37 eV) is one of the best alternate semiconductor material for TiO 2 (3.2 eV) as it has similar band gap energy and high quantum efficiency [6][7][8][9][10][11][12][13][14][15][16][17][18] .…”
mentioning
confidence: 99%
“…Among the semiconductor based photocatalyst, ZnO and TiO 2 are widely used due to their strong oxidation capacity, chemical stability, non-toxicity, low cost etc. ZnO (3.37 eV) is one of the best alternate semiconductor material for TiO 2 (3.2 eV) as it has similar band gap energy and high quantum efficiency [6][7][8][9][10][11][12][13][14][15][16][17][18] .…”
mentioning
confidence: 99%
“…4b) . Remaining two peaks at 288.38 eV and 290.16 eV can be ascribed to ‐COOH and O‐C=O respectively. Figure c shows the O1s spectra with the couple of de‐convoluted peaks, which reveals the existence of a different kind of oxygen functionalities.…”
Section: Resultsmentioning
confidence: 99%
“…The material reactions during atomic layer deposition exhibit the characteristics of sequential, self-limiting surface reactions; therefore, this technique can be used to achieve atomic-scale thickness control and conformal deposition. [75][76][77][78] At present, the preparation of inorganic thermoelectric materials by ALD, including Bi 2 Te 3 , Sb 2 Te 3 , Bi 2 Se 3 , ZnO and TiO 2 , has been reported in the literature. [79][80][81][82] Because the ALD process can be conducted under steady voltage and low temperature, there are fewer restrictions on the substrate, and this technique may be highly competitive in the field of flexible material preparation [83][84][85] and in the incorporation of inorganic thermoelectric materials into textile materials to expand their use in wearable flexible thermoelectric materials.…”
Section: Materials Advances Reviewmentioning
confidence: 99%