Nanostructured g-CN/BiVO composite films with an enhanced photoelectrochemical (PEC) performance have been fabricated via the facile electrospinning technique. The g-CN nanosheets can not only form heterojunctions with BiVO but also prevent the agglomeration of BiVO, helping the formation of nanostructures. The as-prepared g-CN/BiVO films exhibit good coverage and stability. The PEC performance of the g-CN/BiVO films is much more enhanced compared with that for individual BiVO films because of the enhanced electron-hole separation. The photocurrent density is 0.44 mA/cm for g-CN/BiVO films at 0.56 V in the linear sweep current-voltage test, over 10 times higher than that of individual BiVO films (0.18 mA/cm). The effects of the preparation conditions including the g-CN content, collector temperature, calcination temperature, and electrospinning time on the PEC performance were investigated, and the reasons for the effects were proposed. The optimal preparation condition was with 3.9 wt % g-CN content in the electrospinning precursor, 185 °C collector temperature, 450 °C calcination temperature, and 40 min electrospinning time. The excellent PEC performance and the facile preparation method suggest that the g-CN/BiVO films are good candidates in energy and environmental remediation area.