Facile fabrication of Ag/Y:CdS/Ag thin films-based photodetectors with enhanced photodetection performance

Shkir, Mohd.; Khan, Ziaul Raza; Chandekar, Kamlesh V.; Alshahrani, Thamraa; Ashraf, I.M.; Khan, Aslam; Marnadu, R.; Zargar, Rayees Ahmad; Mohanraj, P.; Revathy, M. S.; Manthrammel, M. Aslam; Sayed, M. A.; Ali, H. Elhosiny; Yousef, El Sayed; Algarni, H.; AlFaify, S.; Sanaa, M.F.

doi:10.1016/j.sna.2021.112890

Cited by 16 publications

(4 citation statements)

References 92 publications

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“…The crucial parameters of the photodetector prototype prepared in the present work, viz. , Cu:CdS/FTO compared with various other photodetectors reported 3,11,21,31–38 are shown in Fig. 9.…”

Section: Resultsmentioning

confidence: 98%

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Fast response and multi-color photodetection in p-type Cu:CdS thin films

V. S.,

Kumar,

et al. 2024

Mater. Adv.

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Section: Resultsmentioning

confidence: 98%

“…Furthermore, on/off switching was observed for the on/off light frequency of 20 Hz at each wavelength. The crucial parameters of the photodetector prototype prepared in the present work, viz., Cu:CdS/FTO compared with various other photodetectors reported 3,11,21,[31][32][33][34][35][36][37][38] are shown in Fig. 9.…”

Section: View Article Onlinementioning

confidence: 98%

Fast response and multi-color photodetection in p-type Cu:CdS thin films

V. S.,

Kumar,

et al. 2024

Mater. Adv.

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“…The photodetector parameters such as responsivity (R), detectivity (

), external quantum efficiency (EQE), and photocurrent gain (G) play a crucial role in understanding the influence of CdS layer thickness and the deposition of AuNPs on the CdS layer. These parameters were calculated using the following expressions [ 67 , 68 , 69 ]:

…”

Section: Resultsmentioning

confidence: 99%

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects

Belaid,

Gezgin,

Basyooni-M. Kabatas

et al. 2024

Nanomaterials

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UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

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“…based on its n-type conductivity, visible region band gap (≈2.4 eV), and lower excitonic binding energy of 15 meV. [1][2][3][4] CdS nanostructure-based photodetectors are gaining popularity due to their increased photosensitivity. [5][6][7][8] However, during the synthesis process, the creation of local non-stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film.…”

mentioning

confidence: 99%

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Facile fabrication of Ag/Y:CdS/Ag thin films-based photodetectors with enhanced photodetection performance

Cited by 16 publications

References 92 publications

Fast response and multi-color photodetection in p-type Cu:CdS thin films

Fast response and multi-color photodetection in p-type Cu:CdS thin films

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

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