Facile growth of monolayer MoS2 film areas on SiO2

Mann, John; Sun, Dezheng; Ma, Qiang; Chen, Jen-Ru; Preciado, Edwin; Ohta, Taisuke; Diaconescu, Bogdan; Yamaguchi, Kôichi; Tran, T. Lan Anh; Wurch, Michelle; Magnone, KatieMarie; Heinz, Tony F.; Kellogg, G. L.; Kawakami, Roland; Bartels, Ludwig

doi:10.1140/epjb/e2013-31011-y

Cited by 63 publications

(80 citation statements)

References 28 publications

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“…These two emission peaks typically merge due to their large linewidths, and the peak position of the resulting PL emission then depends on the relative contributions by excitons and trions. Transport measurements on our CVD-grown films indicate n-type conductivity [24], so that the observed PL emission may stem from a superposition of neutral and charged excitons, with a gradual change of the spectral weight due to changing carrier concentration. There may also be a locally varying deposition of amorphous S or Mo during growth, which would change the dielectric environment and modify the Coulomb screening.…”

Section: Photoluminescencementioning

confidence: 84%

A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy

Plechinger

Mann

Preciado

et al. 2014

Semicond. Sci. Technol.

106

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MoS 2 is a highly interesting material, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS 2 films grown by chemical vapor deposition (CVD) and MoS 2 flakes prepared by mechanical exfoliation from mineral bulk crystal. Raman spectroscopy measurements show differences between the in-plane and out-of-plane phonon mode positions in CVD-grown and exfoliated MoS 2 . Photoluminescence (PL) mapping reveals large regions in the CVD-grown films that emit strong PL at room-temperature, and low-temperature PL scans demonstrate a large spectral shift of the A exciton emission as a function of position. Polarization-resolved PL measurements under near-resonant excitation conditions show a strong circular polarization of the PL, corresponding to a valley polarization.

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Section: Photoluminescencementioning

confidence: 84%

A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy

Plechinger

Mann

Preciado

et al. 2014

Semicond. Sci. Technol.

106

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“…MoS 2 monolayers can be experimentally fabricated using different exfoliation techniques [4,19,20] or by chemical (CVD) and physical vapor deposition (PVD) [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

“…* cesar.gonzalez.pascual@gmail.com Different kinds of defects can be produced during the growth process [24], leading to a change in the electronic, magnetic, or optical properties [22,[25][26][27]. The defects can be classified into three types: point defects (such as vacancies or antisites), grain boundaries, and external borders of the compound.…”

Section: Introductionmentioning

confidence: 99%

Molecular detection on a defective MoS2 monolayer by simultaneous conductance and force simulations

González

Dappe

2017

Phys. Rev. B

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Based on simultaneous force and conductance simulations, a proof of concept for a potential method of molecular detection is presented. Using density functional theory calculations, a metallic tip has been approached to different small inorganic molecules such as CO, CO 2 , H 2 O, NO, N 2 , or O 2 . The molecules have been previously chemisorbed on a defect formed by two Mo atoms occupying a S divacancy on a MoS 2 monolayer where they are strongly bonded to the topmost substitutional molybdenum. At that site, the fixed molecules can be imaged by a conductive atomic-force-microscopy tip. Due to the differences in atomic composition and electronic configurations, each molecule yields specific conductance/force curves during the tip approach. A molecule-tip contact is established at the force minimum, followed by the formation of a characteristic plateau in the conductance in most of the cases. Focusing our attention on the position and values of such force minimum and conductance maximum, we can conclude that both characteristic properties can give a clear signature of each molecule, proposing a different method of detecting molecules adsorbed on highly reactive sites.

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“…Similar methods can be used for the production of TMD films, and several routes to the production of MoS 2 thin films have recently been outlined. These typically are not pure CVD processes but rather involve thermally assisted sulfurisation of Mo [30][31][32] or, more commonly, MoO 3 [33][34][35][36], however the use of liquid phase precursors has also been demonstrated [37,38]. WS 2 has similarly been produced through the thermally assisted sulfurisation of WO 3 [33] and W [39] or by atomic layer deposition [40].…”

Section: Introductionmentioning

confidence: 99%

Controlled synthesis of transition metal dichalcogenide thin films for electronic applications

Gatensby

McEvoy

Lee

et al. 2014

Applied Surface Science

149

126

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Please cite this article in press as: R. Gatensby, et al., Controlled synthesis of transition metal dichalcogenide thin films for electronic applications, Appl. Surf. Sci. (2014) Two dimensional transition metal dichalcogenides (TMDs) are exciting materials for future applications in nanoelectronics, nanophotonics and sensing. In particular, sulfides and selenides of molybdenum (Mo) and tungsten (W) have attracted interest as they possess a band gap, which is important for integration into electronic device structures. However, the low throughput synthesis of high quality TMD thin films has thus far hindered the development of devices, and so a scalable method is required to fully exploit their exceptional properties. Within this work a facile route to the manufacture of devices from MoS 2 and WS 2 , grown by vapour phase sulfurisation of pre-deposited metal layers, is presented. Highly homogenous TMD films are produced over large areas. Fine control over TMD film thickness, down to a few layers, is achieved by modifying the thickness of the pre-deposited metal layer. The films are characterised by Raman spectroscopy, electron microscopy and X-ray photoelectron spectroscopy. The thinnest films exhibit photoluminescence, as predicted for monolayer MoS 2 films, due to confinement in two dimensions. By using shadow mask lithography, films with well-defined geometries were produced and subsequently integrated with standard microprocessing process flows and electrically characterised. In this way, MoS 2 based sensors were produced, displaying sensitivity to NH 3 down to 400 ppb. Our device manufacture is versatile, and is adaptable for future nanoscale (opto-) electronic devices as it is reproducible, cost effective and scalable up to wafer scale.

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Facile growth of monolayer MoS2 film areas on SiO2

Cited by 63 publications

References 28 publications

A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy

A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy

Molecular detection on a defective MoS2 monolayer by simultaneous conductance and force simulations

Controlled synthesis of transition metal dichalcogenide thin films for electronic applications

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Facile growth of monolayer MoS2 film areas on SiO2

Cited by 63 publications

References 28 publications

A direct comparison of CVD-grown and exfoliated MoS2using optical spectroscopy

A direct comparison of CVD-grown and exfoliated MoS2using optical spectroscopy

Molecular detection on a defective MoS2 monolayer by simultaneous conductance and force simulations

Controlled synthesis of transition metal dichalcogenide thin films for electronic applications

Contact Info

Product

Resources

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A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy

A direct comparison of CVD-grown and exfoliated MoS₂using optical spectroscopy