Facile hydrothermal synthesis of hexapod-like two dimensional dichalcogenide NiSe2 for supercapacitor

Narayanasamy, Arul; Han, Jeong In

doi:10.1016/j.matlet.2016.06.065

Cited by 98 publications

(23 citation statements)

References 24 publications

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“…Herein, we introduce a solid‐state reaction method, in which the growth rate is supposed to be limited by source supply (including diffusion and reaction), for interface‐confined epitaxial growth of nonlayer structured NiSe films on Ni foil, as schematically illustrated in Figure a. NiSe with a bandgap of 1.8 eV has been widely studied in the fields of electrocatalyst and supercapacitor, but the work on NiSe based photodetector has rarely been reported. Based on the solid‐state reaction between ZnSe film and Ni foil, we have succeeded in the epitaxial growth of large‐area NiSe films with grain size up to micrometer scale on Ni foil.…”

Section: Summary and Comparison Of The Characteristic Parameters Of Nmentioning

confidence: 99%

Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays

Cai

Jeon

et al. 2017

Advanced Materials

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Film-based photodetectors have shown superiority for the fabrication of photodetector arrays, which are desired for integrating photodetectors into sensing and imaging systems, such as image sensors. But they usually possess a low responsivity due to low carrier mobility of the film consisting of nanocrystals. Large-grain semiconductor films are expected to fabricate superior-responsivity photodetector arrays. However, the growth of large-grain semiconductor films, normally with a nonlayer structure, is still challenging. Herein, this study introduces a solid-state reaction method, in which the growth rate is supposed to be limited by diffusion and reaction rate, for interface-confined epitaxial growth of nonlayer structured NiSe films with grain size up to micrometer scale on Ni foil. Meanwhile, patterned growth of NiSe films allows the fabrication of NiSe film based photodetector arrays. More importantly, the fabricated photodetector based on as-grown high-quality NiSe films shows a responsivity of 150 A W in contrast to the value of 0.009 A W from the photodetector based on as-deposited NiSe film consisting of nanocrystals, indicating a huge responsivity-enhancement up to four orders of magnitude. It is ascribed to the enhanced charge carrier mobility in as-grown NiSe films by dramatically decreasing the amount of grain boundary leading to scattering of charge carrier.

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Section: Summary and Comparison Of The Characteristic Parameters Of Nmentioning

confidence: 99%

Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays

Cai

Jeon

et al. 2017

Advanced Materials

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“…[27][28][29][30][31] Among these, 2D NiX 2 (X ¼ S and Se) is a rarely studied group of TMD materials, even though the 3D counterparts are known to have many intriguing properties and applications, especially in electrocatalysis and energy storage devices. 15,[32][33][34][35][36][37] Bulk NiSe 2 , for example, is a Pauli paramagnetic metal with high electrical conductivity. Its high reversible capacity and good cycle ability as an electrode have been demonstrated, making it a promising cathode material for rechargeable lithium batteries.…”

mentioning

confidence: 99%

Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate

Shao

Song

et al. 2017

Applied Physics Letters

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Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe2 film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.

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“…Nowadays, hydro/solvothermal synthesis represents a valuable bottom-up approach to produce TMDs, starting from specific precursors and taking advantages of sealed autoclaves operating at high temperatures (10 -10 2 °C) and controlled pressure (1 -10 Pa). 43,44,45 The main advantages of this strategy lie with the superior aptitude of materials in being induced to solubility via proper temperature and pressure conditions, along with the more accurate control of the operating parameters, which might influence the quality and crystal structure of the final systems. 46 Nevertheless, such an approach envisages some drawbacks related to the need of expensive autoclaves able to withstand the operating conditions (temperature, pressure, pH, solvent, etc.)…”

Section: Solvothermal Synthesismentioning

confidence: 99%

Tailoring the physicochemical properties of solution-processed transition metal dichalcogenides via molecular approaches

2019

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Facile hydrothermal synthesis of hexapod-like two dimensional dichalcogenide NiSe2 for supercapacitor

Cited by 98 publications

References 24 publications

Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays

Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays

Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate

Tailoring the physicochemical properties of solution-processed transition metal dichalcogenides via molecular approaches

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