Graphitic carbon nitride is a promising heterogeneous catalyst for light-induced generation of hydrogen. Here, we report the successful formation of nano-scaled carbon nitride structures on silicon, mitigating the known limitations of charge transport within bulky C-N networks. An efficient photoelectrochemical heterojunction is thereby realized, developed from earth-abundant materials only.The conversion of solar energy to chemical energy is one of the principal routes to establish a green global economy.1 Particularly, hydrogen as a product of solar water splitting may assume a decisive role upon transition from fossil to renewable energy resources.2 For realization of the solar-to-hydrogen conversion process by photoelectrochemical water splitting, suitable photoelectrodes still have to be developed and to meet important demands such as efficiency and durability. Most critical, electrode fabrication has to rely on cost-saving material consumption, and the use of earth-abundant materials appears inevitable for novel device architectures. In this respect, the combination of silicon and polymeric graphitic carbon nitride (g-C 3 N 4 ) represents a highly attractive heterostructure, integrating a state-of-the-art photoabsorber and a promising photocatalyst. Silicon-based photoelectrodes on the one hand, already reached near-record efficiencies in light-induced evolution of hydrogen but had to be activated by noble-metal catalysts.3,4 On the other hand, g-C 3 N 4 is an established candidate for photocatalytic hydrogen production since the report of Wang et al. in 2008 (ref. 5) which boosted almost instantaneously the interest in this material due to the prospect of solar fuel generation without use of noble metal catalysts.
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