Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

Abstract

Ultrathin single crystal platinum diselenide (PtSe ) nanosheets are synthesized using H PtCl and Se as the precursors. The electronic properties are first investigated and exhibit p-type transport behavior with the mobility much larger than 7 cm V s . The further investigation on PtSe /MoS var der Waals p-n junction demonstrated that PtSe could be potentially applied in 2D electronics.

Large‐area high quality PtSe2 thin film with versatile polarity

“…I sd decreases all the time with the V g increasing from ‐80 to 80 V, demonstrating its p‐type behavior. This result is consistent with reported PtSe 2 filmbut inconsistent with mechanical exfoliated PtSe 2 flake . As the bulk PtSe 2 crystal is always synthesized by CVT method with Pt, S, P, Se powders mixed, we suspect it is the Se vacancies or doped atoms like sulfur (S) that play a vital role in determining polarity of PtSe 2 .…”

“…For instance, some large‐area PtSe 2 thin films grown by Yim et al have shown promising gating modulation, yet the quality needs to be improved further. Wang and Zhou realized single‐crystal growth up to 20 μm size, which is of high quality, but still facing the tests such as device fabrication and integrations. Up to now, the transition of metal‐to‐semiconductor and p‐type to other polarities have been only observed in the mechanically exfoliated PtSe 2 .…”

Hierarchically Porous W‐Doped CoP Nanoflake Arrays as Highly Efficient and Stable Electrocatalyst for pH‐Universal Hydrogen Evolution

“…Hence, developing highly efficient and stable non‐noble metals‐based electrocatalysts to replace precious platinum‐based electrocatalysts becomes an urgent problem. Recently, various non‐noble‐metals‐based electrocatalysts, including transition metal carbides, nitrides, sulfides, oxides, selenides, phosphides, and so on have been demonstrated as promising electrocatalysts for HER.…”

Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

“…[18,38] Figure 2a plots the current-voltage (I-V) curve of device in dark. Apparently, this Schottky junction displays a conventional rectifying behavior with a rectification ratio of ≈60 at ± 5 V, which is higher than that of MoS 2 /WS 2 (≈5), [39] PtSe 2 /MoS 2 (15)(16)(17)(18)(19)(20), [40] graphene/In 2 S 3 (≈32), [41] and PtSe 2 /perovskite heterojunctions (≈10), [29] but is slightly lower than that of MoS 2 p-n junction (≈67). [42] Considering the good linear I-V characteristics for Au-PdSe 2 and Au-perovskite achieved ( Figure S4, Supporting Information), the observed rectifying behavior should arise from the Schottky barrier formed at the PdSe 2 /perovskite interface.…”